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X-Ray Spectrometer with a Submicron X-Ray Beam for Ulsi Microanalysis

Published online by Cambridge University Press:  22 February 2011

Naoki Yamamoto,
Yoshio Homma,
Shinji Sakata and
Yoshinori Hosokawa
Naoki Yamamoto
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan
Yoshio Homma
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan
Shinji Sakata
Affiliation:
Corporate Research & Development Promotion Office, Hitachi, Ltd., Tokyo, Japan
Yoshinori Hosokawa
Affiliation:
Research and Development Div., Horiba, Ltd., Kyoto, Japan
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Abstract

A fluorescent and diffraction X-ray spectrometer with a 0.8 μmϕ Xray beam has been developed. It allows simultaneous measurement of local strains and minute amounts of metal contaminants in fine ULSI devices. The minimum sample size for X-ray diffraction measurement with it is a 0.3 μm diameter by 0.2 μm deep volume. It is applied to analyze strain in Al lines, showing that strain in Al single-layer lines (no barrier) increases significantly as the line width is reduced below 1.5 μm. Introducing barrier metals reduces this dependence of strain on line width. It is also found that hillock and void formation has a very strong correlation to strain.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994, 209
Copyright
Copyright © Materials Research Society 1994

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References

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