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X-Ray Techniques for Silicides

Published online by Cambridge University Press:  21 March 2011

Douglas J. Tweet,
Jer-shen Maa and
Sheng Teng Hsu
Douglas J. Tweet
Affiliation:
Sharp Laboratories of America 5700 NW Pacific Rim Blvd Camas, WA 98607, U.S.A.
Jer-shen Maa
Affiliation:
Sharp Laboratories of America 5700 NW Pacific Rim Blvd Camas, WA 98607, U.S.A.
Sheng Teng Hsu
Affiliation:
Sharp Laboratories of America 5700 NW Pacific Rim Blvd Camas, WA 98607, U.S.A.
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Abstract

Previously we have found that the addition of a thin layer of Co between Ni and the Si substrate dramatically improves the thermal stability of the resulting silicide. Here we describe the use of four different x-ray techniques to obtain complementary information on film structure, providing a possible explanation for the observed thermal stability.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001, K6.2
Copyright
Copyright © Materials Research Society 2001

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References

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