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ZnO/GaN Heteroepitaxy

Published online by Cambridge University Press:  26 February 2011

K. W. Jang,
D. C. Oh,
T. Minegishi,
H. Suzuki,
T. Hanada,
H. Makino,
M. W. Cho,
T. Yao and
S. K. Hong
K. W. Jang
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-Ku, Sendai 980–8578, Japan
D. C. Oh
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-Ku, Sendai 980–8578, Japan
T. Minegishi
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-Ku, Sendai 980–8578, Japan
H. Suzuki
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-Ku, Sendai 980–8578, Japan
T. Hanada
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-Ku, Sendai 980–8578, Japan
H. Makino
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2–1–1, Aoba-Ku, Sendai 980–8577, Japan
M. W. Cho
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2–1–1, Aoba-Ku, Sendai 980–8577, Japan
T. Yao
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-Ku, Sendai 980–8578, JapanInstitute for Materials Research, Tohoku University, Katahira 2–1–1, Aoba-Ku, Sendai 980–8577, Japan
S. K. Hong
Affiliation:
Department of Materials Engineering, Chungnam National University, 220, Gung-dong, Yuseong-gu, Daejeon, 305–764, Korea
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Abstract

This paper presents the recent achievements of ZnO/GaN heteroepitaxy. The general controlling method and mechanism for the polarity of heteroepitaxial ZnO and GaN films by interface engineering via Plasma-assisted Molecular beam epitaxy(P-MBE) are introduced in a viewpoint of principle for polarity control. We propose the principle of crystal polarity: Crystal polarity can succeed at the heterointerface when no interface layer is formed, while an interface layer with inversion symmetry is formed, the crystal polarity is inverted at the heterointerfae. The effects of polarity on the interface, surface and bulk structure, and the structural and optical properties of ZnO/GaN epitaxy are also included. The polarity of GaN on ZnO is successfully controlled based on the proposed principle for control of crystal polarity. Additionally, the electronic characteristics such as electron concentration, band-line-up, and C-V characteristics of ZnO/GaN heterointerface are dicussed.

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References

REFERENCES

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