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Synthesis and characterization of high purity, single phase GaN powder

Published online by Cambridge University Press:  10 January 2013

Cengiz M. Balkas,
Cem Basceri and
Robert F. Davis
Cengiz M. Balkas
Affiliation:
North Carolina State University, Department of Materials Science and Engineering Raleigh, North Carolina 27695-7907
Cem Basceri
Affiliation:
North Carolina State University, Department of Materials Science and Engineering Raleigh, North Carolina 27695-7907
Robert F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering Raleigh, North Carolina 27695-7907
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Abstract

Synthesis of high-purity, single-phase gallium nitride (GaN) powder has been achieved by reacting molten Ga with flowing ammonia (NH3) in a hot wall tube furnace. The optimum temperature, NH3 flow rate, and position of the boat in the hot wall tube furnace relative to the NH3 inlet for the complete reaction to pure GaN for our system were 975 °C, 400 standard cubic centimeters per minute (seem) and 50 cm, respectively. The X-ray diffraction (XRD) data revealed the GaN to be single phase with a = 3.1891 Å, c = 5.1855 Å, in space group P63mc, Z=2 and Dx =6.089 g cm−3. Scanning electron microscopy revealed a particle size distribution in the crushed material between 1 and 5 μm with most of the particles being ≍1 μm.

Keywords

gallium nitridesynthesispowderX-ray diffractionscanning electron microscopy

Information

Type
Research Article
Information
Powder Diffraction , Volume 10 , Issue 4 , December 1995, pp. 266 - 268
Copyright
Copyright © Cambridge University Press 1995

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References

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