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X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers

Published online by Cambridge University Press:  29 February 2012

J. Wittge,
A. Danilewsky,
D. Allen,
P. McNally,
Z. J. Li,
T. Baumbach,
E. Gorostegui-Colinas,
J. Garagorri,
M. R. Elizalde and
D. Jacques
...Show all authors
J. Wittge
Affiliation:
Kristallographie, Geowiss. Institut, University Freiburg, Freiburg, Germany
A. Danilewsky
Affiliation:
Kristallographie, Geowiss. Institut, University Freiburg, Freiburg, Germany
D. Allen
Affiliation:
Research Institute for Networks and Communications Engineering, Dublin City University, Dublin, Ireland
P. McNally
Affiliation:
Research Institute for Networks and Communications Engineering, Dublin City University, Dublin, Ireland
Z. J. Li
Affiliation:
Research Centre Karlsruhe, Institut für Synchrotronstrahlung, Karlsruhe, Germany
T. Baumbach
Affiliation:
Research Centre Karlsruhe, Institut für Synchrotronstrahlung, Karlsruhe, Germany
E. Gorostegui-Colinas
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
J. Garagorri
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
M. R. Elizalde
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
D. Jacques
Affiliation:
Jordan Valley Semiconductor (UK), Durham DH1 1TW, United Kingdom
M. C. Fossati
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
D. K. Bowen
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
B. K. Tanner*
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
*
Author to whom correspondence should be addressed. Electronic mail: b.k.tanner@durham.ac.uk
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Abstract

The nucleation of dislocations at indents in silicon following rapid thermal annealing (RTA) has been examined by X-ray diffraction imaging (topography). For indentation loads below 200 mN, no slip bands were generated from the indent sites following RTA at 1000 °C under spike conditions. Upon plateau annealing at 1000 °C, slip dislocations were propagated from some indents but not all. Slip was also observed from edge defects not associated with indentation. For 500-mN indentation load, large scale dislocation sources were generated from the indent sites propagating on two of the four {111} slip planes. These dislocations multiplied into macroscopic-scale slip bands. A significant change in morphology was observed in the 60° dislocation segments after the screw segment reached the rear surface of the wafer. Dislocations changed line direction and in some cases appeared to leave the Peierls trough during glide.

Keywords

X-ray diffraction imagingtopographydislocation source

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Type
Technical Articles
Information
Powder Diffraction , Volume 25 , Issue 2 , June 2010, pp. 99 - 103
Copyright
Copyright © Cambridge University Press 2010

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References

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