Hostname: page-component-7b7567c8c-wxvwp Total loading time: 0 Render date: 2026-11-15T03:59:26.403Z Has data issue: false hasContentIssue false

High temperature X-ray diffraction study of phase decomposition in rapidly quenched Al–Ge–Si

Published online by Cambridge University Press:  10 January 2013

N. Mattern
Affiliation:
Institut für Festkörper und Werkstofforschung Dresden, D-01171 Dresden, Postfach 27 00 16, Germany
A. Teresiak
Affiliation:
Institut für Festkörper und Werkstofforschung Dresden, D-01171 Dresden, Postfach 27 00 16, Germany
T. Schubert
Affiliation:
Institut für Festkörper und Werkstofforschung Dresden, D-01171 Dresden, Postfach 27 00 16, Germany
W. Löser
Affiliation:
Institut für Festkörper und Werkstofforschung Dresden, D-01171 Dresden, Postfach 27 00 16, Germany
S. Doyle
Affiliation:
Institut für Festkörper und Werkstofforschung Dresden, D-01171 Dresden, Postfach 27 00 16, Germany
Get access

Abstract

The phase decomposition occurring during the heating of rapidly quenched Al–Ge–Si alloys has been investigated in situ by means of synchrotron radiation X-ray diffraction. The metastable Al–Ge phases formed in the as-quenched state transform during heating to Al and Ge. The addition of silicon decreases the transformation temperature. A Ge(Si) solid solution is indicated by a systematic change in the lattice constant of Ge as a result of the diffusion of Si from the Al matrix into the phase-separated Ge matrix.

Information

Type
Research Article
Copyright
Copyright © Cambridge University Press 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable