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Thermally-induced stresses in thin aluminum layers grown on silicon

Published online by Cambridge University Press:  06 March 2012

E. Eiper,
R. Resel,
C. Eisenmenger-Sittner,
M. Hafok and
J. Keckes
E. Eiper*
Affiliation:
Erich Schmid Institute for Material Science, Austrian Academy of Sciences and Institute for Metal Physics, University Leoben, Austria, Institute of Solid State Physics, Graz University of Technology, Austria
R. Resel
Affiliation:
Institute of Solid State Physics, Graz University of Technology, Austria
C. Eisenmenger-Sittner
Affiliation:
Institute of Solid State Physics, Vienna University of Technology, Austria
M. Hafok
Affiliation:
Erich Schmid Institute for Material Science, Austrian Academy of Sciences and Institute for Metal Physics, University Leoben, Austria, Materials Center Leoben, University Leoben, Austria
J. Keckes
Affiliation:
Erich Schmid Institute for Material Science, Austrian Academy of Sciences and Institute for Metal Physics, University Leoben, Austria, Materials Center Leoben, University Leoben, Austria
*
a)Author to whom correspondence should be addressed; Electronic mail: ernst.eiper@unileoben.ac.at
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Abstract

Elevated-temperature X-ray diffraction (XRD) was used to evaluate residual stresses in aluminum thin films on Si(100). The films with a thickness of 2 μm were deposited by magnetron sputtering at different temperatures, and XRD measurements were carried out with the heating stage DHS 900 mounted on a Seifert 3000 PTS diffractometer. The strains were characterized always in temperature cycles from room temperature up to 450 °C with steps of 50 °C. Stress values in weakly textured thin films were calculated using the Hill model, applying temperature-dependent X-ray elastic constants of aluminum. The thin films exhibit specific temperature hysteresis of stresses depending on the deposition temperature (being from the range of 50 °C–300 °C). The results allow us to quantify contributions of intrinsic and extrinsic stresses to the total stress in the layers as well as to evaluate phenomena related to plastic yield. The comparison of the data from thin films deposited at different temperatures indicate a dependence of intrinsic stresses on the substrate temperature during deposition as well as the presence of the plastic yield in films during the cool-down after deposition

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Type
Technical Articles
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Powder Diffraction , Volume 19 , Issue 1 , March 2004, pp. 74 - 76
Copyright
Copyright © Cambridge University Press 2004

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References

Atar, E., Sarioglu, C., Demirler, U., Sabri Kayali, E., and Cimenoglu, H. (2002). Scr. Mater. SCMAF7 48, 1331–1336. scz, SCMAF7 CrossRefGoogle Scholar
Callister, W. D. Jr. (1999). Materials Science and Engineering: An Introduction, 5th ed. (Wiley, New York).Google Scholar
Chidambarrao, D., Rodbell, I. P., Thouless, E. M. D., and DeHaven, P. W. (1994). Materials Reliability in Microelectronics (IV), Symposium, pp. 261–268.Google Scholar
Eiper, E., Thesis, University of Technology, Graz-Austria, January 2003.Google Scholar
http://www.webelements.com/webelements/elements/test/Si(Al)/heat.htmlGoogle Scholar
King, H. W., Ferguson, S. H., Gursan, S., and Yildiz, M. (2002). Adv. X-Ray Anal. AXRAAA 45, 232–237. axr, AXRAAA Google Scholar
Kraft, O., Hommel, M., and Arzt, E. (2000). Mater. Sci. Eng., A MSAPE3 288, 209–216. msa, MSAPE3 CrossRefGoogle Scholar
Kuschke, W. M.and Arzt, E. (1994). Appl. Phys. Lett. APPLAB 64, 1097–1099. apl, APPLAB CrossRefGoogle Scholar
Lee, S.-H., Bravman, J. C., Doan, J. C., Lee, S., and Marieb, T. N. (2002). J. Appl. Phys. JAPIAU 91, 6. jap, JAPIAU Google Scholar
Lide, D. R. (1995–1996). Handbook of Chemistry and Physics, 76th ed., Vol. 12, p. 190.Google Scholar
Ma, C. H., Huang, J.-H., and Chen, H. (2002). Thin Solid Films THSFAP 418, 73–78. tsf, THSFAP CrossRefGoogle Scholar
Nix, W. D. (1989). Metall. Trans. A MTTABN 20A, 2217. mta, MTTABN CrossRefGoogle Scholar
Resel, R., Tamas, E., Sonderegger, B., Hofbauer, P., and Keckes, J. (2003). J. Appl. Crystallogr. JACGAR 36, 80–85. acr, JACGAR CrossRefGoogle Scholar
Thouless, M. D. (1993). Acta Metall. Mater. AMATEB 41, 1057–1064. amm, AMATEB CrossRefGoogle Scholar
van Houtta, P.and de Byser, L. (1993). Acta Metall. Mater. AMATEB 41, 2. amm, AMATEB Google Scholar
van Leauwen, M., Kamminga, J.-D., and Mittermeijer, E. J. (1999). J. Appl. Phys. JAPIAU 86, 4. jap, JAPIAU Google Scholar
Venkatraman, R.and Bravmann, J. C. (1992). J. Mater. Res. JMREEE 7, 2040–2048. jmr, JMREEE CrossRefGoogle Scholar
Vook, R. W.and Wirr, F. (1965). J. Appl. Phys. JAPIAU 36, 7. jap, JAPIAU CrossRefGoogle Scholar
Zhan, Z. B., Hershberger, J., Yalisove, S. M., and Billelo, J. C. (2002). Thin Solid Films THSFAP 415, 21,31. tsf, THSFAP Google Scholar