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Artificially nanostructured n-type SiGe bulk thermoelectrics through plasma enhanced growth of alloy nanoparticles from the gas phase – CORRIGENDUM

Published online by Cambridge University Press:  05 October 2011

N. Stein ,
N. Petermann ,
R. Theissmann ,
G. Schierning ,
R. Schmechel  and
H. Wiggers

Abstract

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Information

Type
Corrigendum
Information
Journal of Materials Research , Volume 26 , Issue 18 , 28 September 2011 , pp. 2459
Copyright
Copyright © Materials Research Society 2011

doi: 10.1557/jmr.2011.117, Published by Cambridge University Press, 7 June 2011.

In the last sentence of the abstract, “1000 °C” is incorrect:

“A figure of merit of zT = 0.5 +/- 0.09 at 450 °C and a peak zT of 0.8 +/- 0.15 at 1000 °C could be achieved for a nanostructured, 0.8% phosphorus-doped Si80Ge20 alloy without any further optimization.”

The correct temperature is 800 °C.

References

REFERENCE

Stein, N., Petermann, N., Theissmann, R., Schierning, G., Schmechel, R., and Wiggers, H.: Artificially nanostructured n-type SiGe bulk thermoelectrics through plasma enhanced growth of alloy nanoparticles from the gas phase. J. Mater. Res. 26(15), 1872 (2011).CrossRefGoogle Scholar