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Design of a dual-frequency high-power microwave generator

Published online by Cambridge University Press:  15 December 2011

Juntao He
Affiliation:
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha, People's Republic of China
Yibing Cao*
Affiliation:
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha, People's Republic of China
Jiande Zhang
Affiliation:
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha, People's Republic of China
Ting Wang
Affiliation:
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha, People's Republic of China
Junpu Ling
Affiliation:
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha, People's Republic of China
*
Address correspondence and reprint requests to: Yibing Cao, College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, People's Republic of China. E-mail: caoyibing_1983@163.com

Abstract

A new direction for high-power microwave (HPM) development is to investigate devices capable of producing HPMs with a complicated spectrum. In recent years, some HPM sources with two stable and separate frequencies have been investigated theoretically and experimentally. However, many short-comings still exist in these devices. Especially, the beam-wave interaction efficiency and the output microwave power are low in such devices. This paper proposes a novel dual-frequency HPM generator based on transition radiation. In the device, the electromagnetic fields are localized near the resonator cavities in the form of standing waves, and thus the interference between the different HPM components with different frequencies is weak. Compared with the existing dual-frequency devices, the new structure allows high beam-wave interaction efficiency and high output microwave power. As indicated in particle-in-cell simulation, with an electron beam of 500 kV voltage and 15.0 kA current guided by a magnetic field of 0.8 Tesla, an average power of 1.60 GW with a total power conversion efficiency of 21.3% is obtained, and the frequencies are 1.53 GHz and 3.29 GHz, respectively. Power level between two HPMs is comparable. The simulation results verify the feasibility of the dual-frequency HPM generator.

Information

Type
Research Article
Copyright
Copyright © Cambridge University Press 2011
Figure 0

Fig. 1. (Color online) The three-dimensional schematic (a) and simulation model (b) of the designed dual-frequency high-power microwave generator. In figure (b), the characters a, b, c, d, and e represent the annular cathode, the first and second dual-cavity bunchers, the dual-cavity extractor, and the beam dump, respectively.

Figure 1

Fig. 2. (Color online) Process of beam bunching at frequency f and 2f.

Figure 2

Fig. 3. (Color online) Dispersion relations corresponding to two different HPM components. Frequencies supported by the devices based on transition radiation are circled.

Figure 3

Fig. 4. (Color online) Electric field distributions in (a) L-band buncher and (b) S-band buncher.

Figure 4

Fig. 5. (Color online) Radial profiles of eigen-fields in the L-band and S-band bunchers.

Figure 5

Fig. 6. (Color online) Electric field distributions in the cascading L-band and S-band bunchers. (a) and (b) correspond to the L-band and S-band operating modes, respectively.

Figure 6

Fig. 7. (Color online) Phase-space plot for the dual-frequency HPM generator.

Figure 7

Fig. 8. (Color online) Variation of electric fields versus time and corresponding frequency spectrum at point 1 (Fig. 1).

Figure 8

Fig. 9. (Color online) Variation of electric fields versus time and corresponding frequency spectrum at point 2 (Fig. 1).

Figure 9

Fig. 10. (Color online) Radial profiles of modulating fields in the L-band and S-band bunchers.

Figure 10

Fig. 11. (Color online) Variation of the microwave power versus time and corresponding frequency spectrum at point 3 (Fig. 1).

Figure 11

Fig. 12. (Color online) Output power variation in the range from 20 ns to 30 ns and its corresponding frequency spectrum.

Figure 12

Table 1. Simulation results of some existing dual-frequency HPM devices