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Two-phase separated growth and peritectic reaction during directional solidification of Cu–Ge peritectic alloys

Published online by Cambridge University Press:  24 April 2013

Shujie Wang
Affiliation:
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 15000, China
Liangshun Luo*
Affiliation:
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 15000, China
Yanqing Su*
Affiliation:
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 15000, China
Fuyu Dong
Affiliation:
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 15000, China
Jingjie Guo
Affiliation:
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 15000, China
Hengzhi Fu
Affiliation:
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 15000, China
*
a)Address all correspondence to this author. e-mail: suyq@hit.edu.cn

Abstract

During directional solidification of Cu–Ge peritectic alloys, a two-phase separated structure has been observed. With proper growth conditions, the peritectic ζ-Cu5Ge and primary α-Cu phases completely separate and form cylindrical layered structures. It is found that the formation of the separated structure is closely related to double diffusive convection and growth conditions. In the two-phase separated structure, a large trijunction region of peritectic reaction forms around the cylindrical α-Cu phase. During peritectic reaction, the morphological instabilities of ζ-Cu5Ge occur under high pulling velocities and are explained by the constitutional undercooling criterion. A new coupling growth between the ζ-Cu5Ge-phase and the groove of α-Cu phase near the trijunction is observed. Different from peritectic coupling growth, the diffusion coupling is established below the peritectic temperature. This two-phase separated growth process creates new opportunities for the fabrication of functionally layered materials.

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Articles
Copyright
Copyright © Materials Research Society 2013 
Figure 0

FIG. 1.Part of the phase diagram in a Cu–Ge system.20

Figure 1

FIG. 2.Microstructures of directionally solidified Cu–Ge alloys for different alloy compositions at V = 3 μm/s and G = 25 K/mm. (a) Cu–17.3 wt% Ge, (b) Cu–16.8 wt% Ge, (c) Cu–14.5 wt% Ge, (d) Cu–13.9 wt% Ge, (e) and (f) are the transverse sections of (b) and (c), respectively.

Figure 2

FIG. 3.Longitudinal microstructures taken at the quench front for Cu–15.6 wt% Ge: (a) G = 25 K/mm and V = 10 μm/s, (b) G = 25 K/mm and V = 3 μm/s, (c) G = 25 K/mm and V = 2 μm/s, and (d) G = 10 K/mm and V = 2 μm/s.

Figure 3

FIG. 4.(a) Schematic diagram of CPCG hc < h [Figs. 2(a) and 2(b)], and (b) schematic diagram of the two-phase separated structure hc > h [Figs. 2(c) and 2(d)] (symbols + and − indicate excess and deficiency of Ge).

Figure 4

FIG. 5.Microphotographs of the triple junction regions of the two-phase separated structure at G = 25 K/mm. (a) V = 3 μm/s and Cu–16.8 wt% Ge, (b) V = 5 μm/s and Cu–14.5 wt% Ge, (c) V = 3 μm/s and Cu–14.5 wt% Ge, and (d) V = 2 μm/s and Cu–14.5 wt% Ge.

Figure 5

FIG. 6.Schematic of the triple phase region of peritectic reaction and PCG. (a) Peritectic phase diagram; (b) and (c) triple phase region of peritectic reaction and solute diffusion in liquid in contact to α and ζ at a undercooling below TP, respectively; (d) and (e) PCG and solute diffusion in liquid in contact to α and ζ at a negative undercooling above TP, respectively.

Figure 6

FIG. 7.Geometrical morphology of phases near the triple junction in Cu–14.5 wt% Ge solidified at G = 25 K/mm and V = 2 μm/s.