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Large-signal vector characterization of LDMOS devices for analysis and design of broadband Doherty high-power amplifiers

Published online by Cambridge University Press:  28 May 2019

Alessandro Cidronali*
Affiliation:
Department of Information Engineering, University of Florence, V. S. Marta, 3, 50139 Florence, 50139, Italy
Giovanni Collodi
Affiliation:
Department of Information Engineering, University of Florence, V. S. Marta, 3, 50139 Florence, 50139, Italy
*
Author for correspondence: Alessandro Cidronali E-mail: alessandro.cidronali@unifi.it
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Abstract

We present a novel broadband large-signal vector characterization technique, suitable for high-power broadband Doherty amplifiers (DPAs). It consists of characterizing the DPA three-port sub-circuit composed of the main and peak power devices that are inter-connected by the input network. We discuss a suitable way to extract the three-port X-parameters of a DPA sub-circuit, which is based on a pair of high-power Silicon Laterally Diffused MOSFETs (LDMOSs) for UHF applications. It is then applied to the analysis of a high-power broadband DPA developed on the basis of the same DPA sub-circuit. This technique permits the broadband analysis of the operation of the DPA, as well as to get insight on the load modulation for both the peak and main devices, while they mutually interact through the input network. Measurements and simulated data in the 700–960 MHz bandwidth are compared so as to demonstrate the feasibility of three-port X-parameters characterization for high-power DPAs in UHF band.

Information

Type
EuMW 2018
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2019 
Figure 0

Fig. 1. Schematic block diagram of the sub-circuit DPA test fixture.

Figure 1

Fig. 2. Two-stage uneven splitter and broadband 90 degree phase delay.

Figure 2

Fig. 3. Uneven quadrature power splitter characterization, cf Fig. 2. (a) Amplitude of the transmission coefficients. (b) Phase between transmission coefficients.

Figure 3

Fig. 4. Main and peak device load pull analysis at 750 MHz, Z0 = 5OhmΩ. (a) Main device. (b) Peak device.

Figure 4

Fig. 5. Output network of DPA test fixture. (a) Layout of the test fixture. (b)Reflection coefficients at the termination port between 0 and 10 GHz, Z0 = 25OhmΩ.

Figure 5

Fig. 6. Picture of the test fixture prototype assembled for large-signal vectorial characterization.

Figure 6

Fig. 7. Schematic block diagram of the non-linear-VNA-based characterization setup.

Figure 7

Fig. 8. Picture of the non-linear-VNA setup arrangement for the test fixture prototype characterization.

Figure 8

Fig. 9. Comparison between measured (symbols) and simulated (continuous) XB21 and XB31 magnitudes at 850 MHz.

Figure 9

Fig. 10. Comparison between measured (symbols) and simulated (continuous) XB21 and XB31 phases at 850 MHz.

Figure 10

Fig. 11. X-parameters related to the output devices cross talks. (a) Comparison of simulated (continuos) and measured (symbols) XS31,21 and XS21,31 parameters at 850 MHz. (b) Schematic setup for the definition of XS31,21; similarly for XS21,31.

Figure 11

Fig. 12. Comparison of XS and XT parameters at 850 MHz; simulation: continuous curves, symbols: experiments. (a) Magnitude of XS31,11 and XS21,11. (b)Magnitude of XT31,11 and XT21,11. (c) Phase of XS31,11 and XS21,11.

Figure 12

Fig. 13. Comparison of measured (symbols) and simulated (continuos) XB21 and XB31 parameters at 31 dBm input power across the frequency band. (a)Magnitude of XB31 and XB21. (b) Phase difference between XB31 and XB21.

Figure 13

Fig. 14. Picture of the DPA prototype analyzed by the three-port X-parameters.

Figure 14

Fig. 15. Load modulation as the function of operating frequency, simulated by X-parameters at 850 MHz; measurements: symbols, simulation: continuous curves. (a) Main device load modulation. (b) Peak device load modulation.

Figure 15

Fig. 16. Comparison between measurements and simulations with three-port X parameters characterization of the DPA subcircuit. (a) DPA gain magnitude versus operating frequency and output power. (b) DPA CW drain efficiency versus operating frequency and output power.