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Wideband and wide-angle flat Radomes using dielectric and ferrite layers

Published online by Cambridge University Press:  12 April 2012

Mohammad Khalaj-Amirhosseini*
Affiliation:
College of Electrical Engineering, Iran University of Science and Technology, Narmak, Tehran, Iran
Sayed Mohammad Javad Razavi
Affiliation:
College of Electrical Engineering, Iran University of Science and Technology, Narmak, Tehran, Iran
*
Corresponding author: M. Khalaj-Amirhosseini Email: khalaja@iust.ac.ir
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Abstract

A new structure is proposed in this article, to operate as wideband and wide-angle flat Radome. In this structure several dielectric and ferrite layers are placed successively, one next to the other, to behave as a matched layer. First, the relationship between the permittivity and permeability of a required fictitious mixed material is obtained. Then the required permittivity and permeability of dielectric and ferrite layers are obtained at desired incidence angle. The performance of the proposed structure is investigated and validated using some theoretical and simulation examples.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012
Figure 0

Fig. 1. (a) The cross section of a flat Radome of thickness d composed of a fictitious mixed material (MMR). (b) The cross section of a flat Radome of thickness d consisting of 2N + 1 dielectric and ferrite layers alternately (DFR).

Figure 1

Fig. 2. The |ΓTE| and |ΓTM| of DFR at f = 10 GHz versus μr and ɛr, assuming d = 5 mm and θi = θ0 = 0° (those of MMR are minus infinite).

Figure 2

Fig. 3. The |ΓTE| and |ΓTM| of DFR at f = 10 GHz versus d, assuming μr = ɛr = 2 and θi = θ0 = 0° (those of MMR are minus infinite).

Figure 3

Fig. 4. The |ΓTE| and |ΓTM| of DFR and MMR at f = 10 GHz versus θi, assuming d = 5 mm and μr = ɛr = 2 (θ0 = 0°).

Figure 4

Fig. 5. The |ΓTE| and |ΓTM| of DFR and MMR at f = 10 GHz versus θi, assuming d = 5 mm, μr = 2, ɛr = 1.25, μrm = 1.5, and ɛrm = 1.083 (θ0 = 45° for TE).

Figure 5

Fig. 6. The |ΓTE| and |ΓTM| of DFR and MMR at f = 10 GHz versus θi, assuming d = 5 mm, μr = 1.25, ɛr = 2, μrm = 1.083, and ɛrm = 1.5 (θ0 = 45° for TM).

Figure 6

Fig. 7. The |ΓTE| and |ΓTM| of a DFR with d = 5 mm, N = 4 and μr = ɛr = 2 (θ0 = 0°) and those of a homogeneous dielectric layer with d = 5 mm and ɛr = 2.

Figure 7

Fig. 8. The |ΓTE| and |ΓTM| of a DFR with d = 5 mm, N = 4, and μr = ɛr = 1.2 (θ0 = 0°) and those of a homogeneous dielectric layer with d = 5 mm and ɛr = 1.2.

Figure 8

Fig. 9. The |ΓTE| and |ΓTM| of a DFR with d = 5 mm, N = 4, and μr = ɛr = 2 (θ0 = 0°).

Figure 9

Fig. 10. The |ΓTE| and |ΓTM| of a DFR with d = 5 mm, N = 4, and μr = ɛr = 1.2 (θ0 = 0°).

Figure 10

Fig. 11. The absolute of electric field for TE polarized incident wave at f = 10 GHz simulated by CST software. (a) a homogeneous dielectric layer with d = 5 mm and ɛr = 2. (b) a DFR with d = 5 mm, N = 4, and μr = ɛr = 2 (θ0 = 0°).