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Novel approaches for low temperature sintering of inkjet-printed inorganic nanoparticles for roll-to-roll (R2R) applications

Published online by Cambridge University Press:  01 February 2013

Jolke Perelaer*
Affiliation:
Laboratory of Organic and Macromolecular Chemistry, Friedrich-Schiller-University Jena, D-07743 Jena, Germany; Jena Center for Soft Matter, Friedrich-Schiller-University Jena, D-07743 Jena, Germany; and Dutch Polymer Institute (DPI), 5600 MB Eindhoven, Netherlands
Ulrich S. Schubert*
Affiliation:
Laboratory of Organic and Macromolecular Chemistry, Friedrich-Schiller-University Jena, D-07743 Jena, Germany; Jena Center for Soft Matter, Friedrich-Schiller-University Jena, D-07743 Jena, Germany; and Dutch Polymer Institute (DPI), 5600 MB Eindhoven, Netherlands
*
a)Address all correspondence to these authors. e-mail: jolke.perelaer@uni-jena.de

Abstract

Within the last decade, inkjet printing technology has developed from only a text and graphic industry to a major topic of scientific research and development. Inkjet printing can be used as a highly reproducible noncontact patterning technique to print at high speeds either small or large areas with high quality features; it requires only small amounts of functional materials, which immediately lower production costs. Furthermore, inkjet printing reduces the amount of processing steps due to its additive technique of materials deposition, which further decreases productions costs. This contribution provides a literature survey covering the latest results in low temperature sintering inkjet-printed metal precursor materials in a fast and efficient manner, aiming for roll-to-roll processing. The prepared features can be used as interconnects and contacts for microelectronic applications, including organic light-emitting diodes, organic photovoltaics, and radio frequency identification tags.

Information

Type
Invited Feature Paper
Copyright
Copyright © Materials Research Society 2013
Figure 0

FIG. 1. Schematic diagram showing the mechanisms of coalescence. Reprinted with permission from Ref. 16, copyright 2012, the American Chemical Society.

Figure 1

FIG. 2. Skin layer removal and microstructures after repetitive low-pressure plasma sintering. Reprinted with permission from Ref. 24, copyright 2012, the Royal Society of Chemistry.

Figure 2

FIG. 3. (a) Schematic representation of contactless AC sintering between a probe above the NP layer and a ground plate beneath the printing substrate. IR (λ ∼ 10 μm) images of (b) pulse and (c) square shaped (closed-loop) conductor patterns with UDC = 5 V voltage applied over the conductors for visualization purposes. Reprinted with permission from Ref. 25, copyright 2012, Institute of Physics Publishing.

Figure 3

FIG. 4. R2R photonic sintering tool from NovaCentrix (Austin, TX). Reprinted with permission from PulseForge™ brochure, http://www.novacentrix.com.

Figure 4

FIG. 5. Time-dependent resistance over a single layer line (25 mm length and 500 μm width) upon (a) thermal and (b) photonic presintering (500 W). Reprinted with permission from Ref. 32, copyright 2012, Wiley-VCH Verlag GmbH & Co.KGaA.

Figure 5

FIG. 6. Inkjet-printed honeycomb template sintered using R2R photonic sintering followed by microwave flash sintering. Reprinted with permission from Ref. 32, copyright 2012, Wiley-VCH Verlag GmbH & Co.KGaA.

Figure 6

FIG. 7. (a) Top view SEM image of the single layer line after plasma presintering and microwave flash sintering, resulting in a conductivity of 60% of bulk silver; (b) a silver pattern printed on top of a four-layer [PET:indium tin oxide (ITO):ZnS:BaTiO3] EL device. The device illuminates upon applying a voltage between the ITO and the silver electrodes. Reprinted with permission from Ref. 33, copyright 2012, Wiley-VCH Verlag GmbH & Co.KGaA.

Figure 7

FIG. 8. Micrographs of an OFET test structure with (a) a longer channel (L ∼ 10 μm) and (b) a shorter channel (L ∼ 1.5 μm). “S,” “D,” and “G” indicate source, drain, and gate, respectively. The circles are inkjet-printed semiconducting polymer. The two bright vertical parallel lines are laser sintered gold electrodes (source and drain). The horizontal line is a gate electrode and is under the dielectric layer. The lines indicate the edges of an original inkjet-printed line. (c) Schematics of an OFET. (d) Micrograph of arrays of OFETs fabricated on a polyimide substrate. Reprinted with permission from 34, copyright 2012, Institute of Physics Publishing.

Figure 8

FIG. 9. Volume resistivity as function of irradiation time for inkjet-printed silver NPs on paper using an IR lamp at an intensity of 2–4 W/cm2. The dashed line indicates the bulk resistivity of silver. Reprinted with permission from Ref. 38, copyright 2012, Elsevier Science.

Figure 9

FIG. 10. Top: schematic illustration showing what happens when a droplet of PDAC solution is printed onto a silver NPs array. Bottom: SEM image of a printed drop zone (b) and the magnified images of NP arrays after the contact with PDAC outside (a) and inside (c) the droplet zone. Reprinted with permission from Ref. 40, copyright 2012, the American Chemical Society.