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Effect of annealing time on structural and microwave dielectric characteristics of Li2ZnTi3O8 ceramics

Published online by Cambridge University Press:  11 May 2015

Hamid Taghipour-Armaki
Affiliation:
Department of Materials Science and Engineering, Tarbiat Modares University, Tehran 14115–143, Iran
Ehsan Taheri-Nassaj*
Affiliation:
Department of Materials Science and Engineering, Tarbiat Modares University, Tehran 14115–143, Iran
Maryam Bari
Affiliation:
Department of Materials Science and Engineering, Tarbiat Modares University, Tehran 14115–143, Iran
*
a) Address all correspondence to this author. e-mail: taheri@modares.ac.ir

Abstract

In the present work, the Li2ZnTi3O8 ceramics were prepared via the solid-state reaction method, afterward annealed at 800 °C in a time variation from 4 to 20 h. The ordering, microstructures and dielectric properties were investigated using x-ray diffraction, scanning electron microscopy, network analyzer, and Raman spectroscopy. The most significant enhancement of quality factor is obtained in the sample annealed for 20 h, while the dielectric constant and temperature coefficient of resonant frequency change slightly. This result mainly attributes to the enhancement of ordering, which could be related to the increase in the Zn–O bond strength in ZnO4 tetrahedra. Meanwhile, the full-width at half-maximum of A1g mode decreased with higher annealing time, which suggested less variation in the Zn–O bond length and a higher degree of ordering. The best combination of microwave dielectric characteristic is obtained in the sample annealed at 800 °C for 20 h: Q × f = 112,400 GHz, εr = 24.500, and τf = −11 ppm/°C.

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Articles
Copyright
Copyright © Materials Research Society 2015 
Figure 0

FIG. 1. Heat-treatment profiles of LZT ceramics.

Figure 1

FIG. 2. (a and b) XRD patterns for LZT as-sintered and annealed samples under various conditions. (a) As-sintered sample, (b) annealed at 800 °C/4 h, (c) annealed at 800 °C/8 h, (d) annealed at 800 °C/12 h, (e) annealed at 800 °C/16 h, and (f) annealed at 800 °C/20 h. (c) XRD patterns for LZT as-sintered and annealed samples at 800 °C for 20 h.

Figure 2

FIG. 3. The Rietveld refined plot of LZT ceramics annealed for 20 h.

Figure 3

FIG. 4. Long-range order parameter (S) and lattice parameter of LZT samples as a function of annealing time, obtained from Rietveld refinement.

Figure 4

FIG. 5. SEM micrographs of sintered and annealed samples under various conditions (a) sintered sample, (b) annealed at 800 °C/4 h, (c) annealed at 800 °C/16 h, and (d) annealed at 800 °C/20 h.

Figure 5

FIG. 6. Room temperature Raman spectra for as-sintered and annealed samples under various conditions (t = 0, 4, 8, 12, 16, and 20 h).

Figure 6

TABLE I. Raman shift of A1g mode of ZnO4 tetrahedra and LiO4 tetrahedra and long-range order (S) parameter variation as a function of annealing time of LZT ceramics.

Figure 7

FIG. 7. The variations of Raman modes of LZT ceramics as a function of annealing time (t = 0, 4, 8, 12, 16, and 20 h).

Figure 8

FIG. 8. The FWHM of A1g mode of ZnO4 tetrahedra of LZT ceramics as a function of annealing time.

Figure 9

FIG. 9. (a) Quality factor, (b) dielectric constant, and (c) temperature coefficient of the resonant frequency of LZT ceramics annealed at 800 °C in a time variation from 4 to 20 h.