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Additive nanomanufacturing – A review

Published online by Cambridge University Press:  04 August 2014

D.S. Engstrom
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
B. Porter
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
M. Pacios
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
H. Bhaskaran*
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
*
a) Address all correspondence to this author. e-mail: harish.bhaskaran@materials.ox.ac.uk

Abstract

Additive manufacturing has provided a pathway for inexpensive and flexible manufacturing of specialized components and one-off parts. At the nanoscale, such techniques are less ubiquitous. Manufacturing at the nanoscale is dominated by lithography tools that are too expensive for small- and medium-sized enterprises (SMEs) to invest in. Additive nanomanufacturing (ANM) empowers smaller facilities to design, create, and manufacture on their own while providing a wider material selection and flexible design. This is especially important as nanomanufacturing thus far is largely constrained to 2-dimensional patterning techniques and being able to manufacture in 3-dimensions could open up new concepts. In this review, we outline the state-of-the-art within ANM technologies such as electrohydrodynamic jet printing, dip-pen lithography, direct laser writing, and several single particle placement methods such as optical tweezers and electrokinetic nanomanipulation. The ANM technologies are compared in terms of deposition speed, resolution, and material selection and finally the future prospects of ANM are discussed. This review is up-to-date until April 2014.

Information

Type
Review Article
Copyright
Copyright © Materials Research Society 2014 
Figure 0

FIG. 1. (a) Equipment cost, patterning speed, and minimum resolution of additive manufacturing methods (square) compared with traditional resist-based lithography methods (ellipse). (b) Projection of the 3D graph in (a) showing the capital cost of equipment versus minimum resolution for ANM methods (white) and traditional resist-based methods (gray). (c) Projection of the 3D graph in (a) showing the capital cost of equipment versus patterning speed for ANM methods (white) and traditional resist-based methods (gray). (EUV = extreme UV lithography, DUV = deep UV lithography, EBL = electron-beam lithography, NIL = nanoimprint lithography, STM = scanning tunneling microscopy, AFM = atomic force microscopy).

Figure 1

FIG. 2. (a) Schematic representation of the basic molecular deposition by DPN through a water meniscus formed between the scanning probe tip and the substrate surface. (b) Direct deposition of SAMs (16-mercaptohexadecanoic acid) on Ag as an etch resist to pattern 70-nm wide features. Reproduced from Refs. 33 and 34.

Figure 2

FIG. 3. (a) Optical micrograph of part of the 2D array of cantilevers used for patterning. Inset: SEM image of the cantilever arrays at a different viewing angle. (b) Large-area SEM image of part of an 88,000,000-gold-dot array (40 × 40 within each block) on an oxidized silicon substrate. (c) Representative AFM topographical image of part of one of the blocks, where the dot-to-dot distance is 400 nm and the dot diameter is 100 ± 20 nm. Reproduced from Ref. 50.

Figure 3

FIG. 4. (a) A schematic illustration of the PPL setup. (b) A photograph of an 11-million-pen array. (c) Scanning electron microscope image of the polymer pen array. The average tip radius of curvature is 70 ± 10 nm (inset). Reproduced from Ref. 53.

Figure 4

FIG. 5. (a) Schematic illustration of a HSL tip array supported by a transparent, soft backing layer that provides mechanical flexibility to each tip. (b) An SEM image of the Si tip array on SiO2/PDMS/glass with a 150-μm pitch between tips. The inset shows a large area of the array to demonstrate the homogeneity of the tips. Reproduced from Ref. 51.

Figure 5

FIG. 6. (a) AFM image of SAM dots printed using DPN. (b) Human stem cells grown on nanopatterned surface. (c) Height profile of nanodots of SAMs. (d) Fluorescence micrograph of phospholipid nanodots patterned by DPN. (e) Fluorescence micrograph of a T-cell selectively adhered to and activated by functional proteins (anti-CD3/anti-CD28 antibodies) bound to phospholipid multilayer patterns via streptavidin. (a)–(c) reproduced from Ref. 59. (d), (e) reproduced from Ref. 60.

Figure 6

FIG. 7. (a) Photograph of compound Taylor cone containing coaxial fluid flow. (b) Close-up of coaxial jet. Reproduced from Ref. 70.

Figure 7

FIG. 8. Schematic of EHD printing process and setup. (a) Growth of a liquid meniscus and subsequent ejection of ink nanodroplets from its apex on application of a DC voltage. During DC on-time, droplets are ejected at a homogenous period τe and, once impacted, are vaporized (represented by wavy arrows) in the course of τe. After periodic repetition of this event (for illustration convenience merged into one cycle), a sharp structure consisting of a multitude of formerly dispersed nanoparticles rises from the substrate, attracting approaching charged droplets by electrostatic nanodroplet autofocusing (straight arrows). The growth process is further illustrated with SEM micrographs (150 nm scale bar) of (b) the deposition pattern of a single nanodroplet and that of (c, d) actual nanopillars. (e) Schematic of the ENA NanoDrip setup with the nozzle located above an underlying glass substrate placed on an ITO-coated glass slide representing the grounded counter electrode. Voltage stimuli were applied in the form of amplified DC signals between the ink-filled, metal-coated pipette and the counter electrode. Reproduced from Ref. 72.

Figure 8

FIG. 9. Poly(ethylene oxide) 3D structures fabricated by electrospinning. Reproduced from Ref. 79.

Figure 9

FIG. 10. (a)–(c) Biocompatible albumin (protein) nanofibers with diameters below 100 nm fabricated by electrospinning. Reproduced from Ref. 83.

Figure 10

FIG. 11. Features and devices created by DLW literature. (a) True color images of carpet invisibility cloak for unpolarized light, ranging in wave length from 500 to 900 nm, with both reference and cloak structures. Reproduced from Ref. 87. (b–e) SEM images of silver microscale lines drawn arbitrarily onto 3D structures. Reproduced from Ref. 88. (f, g) True-color reflection-mode optical micrographs of woodpile photonic crystals 20 × 20 µm2 fabricated by (f) regular DLW (MPP) and (g) STED-DLW. Reproduced from Ref. 89. (h) SEM image of a 22 nm silver dot grown by laser driven nucleation and growth, with (i) the corresponding intensity profile as indicated in the micrograph. Reproduced from Ref. 90.

Figure 11

FIG. 12. (a, b) STM images of the arrangement of Xe atoms on a Ni surface (a) before and (b) after manipulation with the STM probe. Reproduced from Ref. 27. Each letter is 5 nm from top to bottom. (c–e) A sequence of AFM images showing the lateral manipulation of substitutional Sn adatoms in a Ge surface by inducing adatom exchange at room temperature with an AFM probe tip. Reproduced from Ref. 113. One of these manipulation steps is presented (c) before and (d) after adatom exchange of the brighter Sn atoms and (c) shows the final AFM image of the Sn atoms rearranged to give the atomic symbol Sn. (c) and (d) are 4.6 × 4.6 nm2 and (e) is 7.7 × 7.7 nm2.

Figure 12

FIG. 13. (a, b) An AFM probe with a haptic force feedback is used to move a CNT on the surface between two electrodes to create an infrared sensor. Reproduced from Ref. 130. AFM images (a) before and (b) after the nanomanipulation show the successful transfer. (c, d) SEM images of the bending of a carbon nanofiber with an STM probe in a 4-probe STM system. Reproduced from Ref. 119.

Figure 13

FIG. 14. Non-contact capture of 200 nm polystyrene beads by a triaxial probe by dielectrophoresis. Reproduced from Ref. 137. (a) Schematic and three representative fluorescence images of a 100 nm radius bead trapped in the negative-dielectrophoresis trap. (b) Scatter plots of the position of the bead in the trap (red dot) and the tip inferred from the position of an attached bead (blue dot). (c) Scatter plot of the separation between the trapped bead and the triaxial tip given by the separation of trapped bead/adhered bead pairs. The axes of tightest and loosest trapping are determined with principal component analysis and are shown on the plot as the x-axis and y-axis, respectively. (d) Histogram of the spread of the trapped bead about the x-axis. (e) Histogram of the spread of the trapped bead about the y-axis.

Figure 14

FIG. 15. The capture of 22 nm polymer nanoparticles in a photonic crystal (PhC) resonator. Reproduced from Ref. 144. (a) SEM image of a silicon nitride PhC resonator. (b) FDTD simulation showing the electric field distribution near the resonator cavity (indicated by the red dashed lines in panel (a). The colors indicate the relative field intensity (arbitrary unit). Strong field enhancement can be seen within the small hole at the center of the cavity. Scale bars in (a) and (b), 1 μm. (c) Schematic showing trapping of a nanoparticle on a silicon nitride PhC resonator. (d) Schematic showing the relative locations of the resonator and the flow chamber. The resonator and the waveguides connected to the resonator are on the top of a silicon dioxide layer. The upper part of the resonator is exposed to the aqueous solution in the flow chamber, while the waveguides connected to the resonator are surrounded by silicon dioxide. (e, f) Histograms of the displacement of the trapped particle from the trap center in the X and Y direction.

Figure 15

FIG. 16. The capture and manipulation of a 50 nm polystyrene bead with a near-field optical tweezer. Reproduced from Ref. 146. (a) SEM image of an 85-nm-gap bowtie nanoaperture patterned at the extremity of a tapered optical fiber. (b) Schematic of experimental configuration. The 1,064 nm trapping laser is directly coupled into the fiber to excite the transverse mode of the bowtie nanoaperture. (c) Composite image reproducing the displacement of the trapped object. This displacement takes place over a 30 s time period with numbers 1–12 represent the successive steps of the tip and particle movement.

Figure 16

FIG. 17. Single nanoparticle printing. Reproduced from Ref. 156. (a) Schematic of the nanoparticle capture process: a colloid meniscus containing 60 nm Au nanoparticles is drawn across an indented PDMS surface. (b) A bright-field optical micrograph of the assembly in action; the bright line indicates the accumulation zone of nanoparticles in the colloid. (c, d) AFM topography scans of 60 nm Au nanoparticles (c) captured on the PDMS stamp and (d) printed onto a silicon substrate. (e) SEM image of detail (left eye) from a printed array of Au nanoparticles. (f) SEM image of silicon nanowires grown from a printed array of Au nanoparticles (inset is tilted).

Figure 17

FIG. 18. (a) Single nanoparticle capture in an array by self-assembly. SEM images of 20 nm Au particles self-assembled onto a surface patterned with gates. (b) Histogram of the number of nanoparticles captured on each of 400 tested gates. (c) Superimposed plot for the positions of single nanoparticles. Inset: SEM image of a gate containing one Au nanoparticle. Reproduced from Ref. 145.

Figure 18

TABLE I. List of the materials, deposition speed, and minimum feature size reported for each ANM technology. * = Estimated.

Figure 19

FIG. 19. ANM in the coming decade is likely to fabricate single electron transistors, multiplexed bioarrays, and 3D phase change memory. Devices and sensors could be directly printed on existing technologies within aeronautical, automotive, medical, and optical industries.