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Design of a wideband isolated out-of-phase filtering power divider/combiner with sharp selectivity

Published online by Cambridge University Press:  13 March 2023

Xuedao Wang
Affiliation:
School of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing, China Ministerial Key Laboratory of JGMT, Nanjing University of Science and Technology, Nanjing, China
Dawei Wang
Affiliation:
School of Electrical and Automation Engineering, Nanjing Normal University, Nanjing, China
Zai-Cheng Guo*
Affiliation:
School of Electrical and Automation Engineering, Nanjing Normal University, Nanjing, China
Gang Zhang
Affiliation:
School of Electrical and Automation Engineering, Nanjing Normal University, Nanjing, China
*
Author for correspondence: Zai-Cheng Guo, E-mail: 61226@njnu.edu.cn
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Abstract

A new isolated out-of-phase filtering power divider/combiner with high selectivity is presented. Based on a single-layer microstrip, required coupling strength and phase difference are achieved by two pairs of three-line coupled feeding structures. To realize desired bandpass responses, a specific resonator is located between the input and output coupled structures. By connecting a half-wavelength transmission line which is centrally loaded with a grounded resistor between two output ports, high port-to-port isolation is attained. Based on the impedance matrix of coupled three-line structure, theoretical filtering responses are predicted with the specified bandwidth and return loss. For demonstration, a prototype is designed, fabricated, and tested. Both simulated and measured results are displayed to verify the design mechanism.

Information

Type
Passive Components and Circuits
Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with the European Microwave Association
Figure 0

Fig. 1. Equivalent circuit of the proposed filtering out-of-phase PD.

Figure 1

Fig. 2. (a) Theoretical responses of the filtering PD without isolation network, (b) variation of phase difference with different values of electrical length θ1. (Selected parameters are that P1 = 85.9 Ω, Q1 = 79.5 Ω, R1 = 36.2 Ω, S1 = 16.9 Ω, P2 = 77.7 Ω, Q2 = 77.2 Ω, R2 = 29.8 Ω, S2 = 14.2 Ω, Z2 = 106.6 Ω.)

Figure 2

Fig. 3. Simplified equivalent circuit for the determinations of Zr and Riso.

Figure 3

Fig. 4. Real and imaginary parts of ZinR in Fig. 3 based on parameters in Fig. 2.

Figure 4

Fig. 5. Layout and the sample photograph of the proposed PD.

Figure 5

Fig. 6. Theoretical, simulated (Sim.), and measured (Meas.) results of the proposed PD. (a) Magnitudes of S11, S21, and S31, (b) magnitudes of S23, S22, and S33, (c) phase and amplitude imbalances.

Figure 6

Fig. 7. Simulation results of the circuit layout with or without isolation resistor. (a) Magnitudes of S11, S21, and S31, (b) magnitudes of S23.

Figure 7

Table 1. Comparisons with other previous works