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Thermogravimetric analysis of the oxidation resistance of ZrB2–SiC and ZrB2–Sic–TaB2–based compositions in the 1500–1900 °C range

Published online by Cambridge University Press:  11 January 2011

Fei Peng
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Gregg Van Laningham
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Robert F. Speyer*
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
*
a)Address all correspondence to this author. e-mail: robert.speyer@mse.gatech.edu

Abstract

Theoretically dense ZrB2–SiC two-phase microstructures were isothermally oxidized for ∼90 min in flowing air in the range 1500–1900 °C. Specimens with 30 mol% SiC formed distinctive reaction product layers that were highly protective; 28 mol% SiC–6 mol% TaB2 performed similarly. At and above 1700 °C, the composition with only 15 mol% SiC oxidized extensively because of deficient silicate liquid formation. Specimens with 60 mol% SiC were resistant to oxidation up to 1800 °C; at 1900 °C, this composition displayed periodic ruptures of the passivating layer by emerging gas bubbles. Oxide coating thicknesses calculated from weight loss data were consistent with those measured from scanning electron microscopy micrographs. A layer of ZrB2 devoid of SiC was argued to be from preferential removal of SiC by reaction of a silica oxidation product with adjacent unreacted SiC to form escaping gases.

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Articles
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Copyright © Materials Research Society 2011
Figure 0

TABLE I. Raw material characteristics.

Figure 1

TABLE II. Sample compositions.

Figure 2

FIG. 1. Compilation of TG traces for various isothermal exposures to flowing dry air at the indicated temperatures. Circle: 15.34 mol% SiC; square: 29.74 mol% SiC; upward triangle: 58.92 mol% SiC; downward triangle: 27.91 mol% SiC–3.32 mol% TaB2. In this figure, symbols are used only to identify traces; each TG trace is made up of ∼1000 data pairs.

Figure 3

FIG. 2. Weight change of various compositions exposed to flowing air at various temperatures after 100 min of oxidation. Extrapolated values were used for oxidations that were completed before 100 min. Experimental data are not corrected for buoyancy effects, which are separately displayed in the figure (dashed line).

Figure 4

FIG. 3. Oxide coating thicknesses based on measured weight losses.

Figure 5

FIG. 4. Cross sections (via diamond wafering blade) of specimens heat-treated at 1800 °C for ∼90 min. (a) 15.34 mol% SiC and (b) 27.91 mol% SiC. The ruled lines are 1 mm apart. The specimen in (a) was mounted in the crucible in the furnace such that the bottom of the part is out of the page, and the top extends into the page. The reaction layer in (b) is not uniform as portions of it snapped off as the displayed axial cross-section was being cut.

Figure 6

FIG. 5. Approximately 15 mol% SiC specimen oxidized at 1600 °C for ∼90 min.

Figure 7

FIG. 6. Approximately 15 mol% SiC specimen oxidized at 1800 °C for ∼90 min.

Figure 8

FIG. 7. Approximately 30 mol% SiC specimen oxidized at 1700 °C for ∼90 min. Marked regions: (a) glassy region adjacent to the surface; (b) zirconia particles immersed in silicate glass; (c) ZrB2 regions depleted of SiC; (d) untransformed ZrB2–SiC.

Figure 9

FIG. 8. Approximately 30 mol% SiC specimen oxidized at 1900 °C for ∼90 min.

Figure 10

FIG. 9. Comparatively low magnification of ∼60 mol% SiC specimen oxidized at 1900 °C for ∼90 min. (a) Glassy layer with imbedded bubbles. (b) ZrB2 with regions that had SiC replaced by porosity. Cracks/fissures in this layer are interpreted to have resulted from stresses via differences in coefficient of thermal expanions during cooling. (c) Untransformed ZrB2–SiC.

Figure 11

FIG. 10. Approximately 28 mol% SiC and ∼3 mol% TaB2 specimen oxidized at 1900 °C for ∼90 min. Letter markers correspond to the same region types as in Fig 7.

Figure 12

FIG. 11. Thicknesses of various layers, as measured in the SEM, of oxidation-altered ZrB2-based ceramics.

Figure 13

FIG. 12. Equilibrium constant versus temperature as calculated by the expression ΔG°rxn = – RT ln kp where ΔG°rxn is the standard (1 bar) Gibbs energy of reaction, R is the gas constant, T is absolute temperature, and kp is the equilibrium constant. $k_p = 1/p_{{\rm{O}}_2^{5/2} } $, $k_p = p_{{\rm{B}}_{\rm{2}} {\rm{O}}_2 } /p_{{\rm{O}}_2185 } $, $k_p = p_{{\rm{CO}}} /p_{{\rm{O}}_2{3/2} } $, $k_p = p_{{\rm{CO}}} p_{{\rm{SiO}}} /p_{{\rm{O}}_2 } $, for the highest to lowest traces, respectively. Standard Gibbs energies of reactions were based on the Gibbs energies of formation of compounds18.

Figure 14

FIG. 13. Equilibrium constant versus temperature for the indicated equilibria. For this reaction, kp = pCOpSiO.

Figure 15

FIG. 14. SiO(g) partial pressure as a function of oxygen partial pressure and temperature for the equilibria: SiO2(l) = SiO(g) + (1/2)O2(g).