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Characterization and nanopatterning of organically functionalized graphene with ultrahigh vacuum scanning tunneling microscopy

Published online by Cambridge University Press:  14 July 2011

Qing Hua Wang
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA; qhwang@mit.edu
Mark C. Hersam
Affiliation:
Materials Science and Engineering, Northwestern University, Evanston, IL 60208-3108 USA; m-hersam@northwestern.edu

Abstract

With exceptional carrier mobilities, mechanical strength, and optical transparency, graphene is a leading material for next-generation electronic devices. However, for most applications, graphene will need to be integrated with other materials, which motivates efforts to understand and tune its surface chemistry. In particular, the modification of graphene via organic functionalization holds promise for tuning the electronic properties of graphene, controlling interfaces with other materials, and tailoring surface chemical reactivity. Toward these ends, this article reviews recent work from our laboratory on noncovalent and covalent organic functionalization of graphene. Using ultrahigh vacuum scanning tunneling microscopy (UHV STM), the molecular ordering and electronic properties of organic adlayers on graphene are characterized at the molecular scale. In addition, UHV STM is employed to nanopattern these organic layers with sub-5 nm resolution, thus providing a pathway for producing graphene-based heteromolecular nanostructures.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2011
Figure 0

Figure 1. Scanning tunneling microscopy (STM) images of pristine epitaxial graphene on SiC(0001). (a) Large-area STM image showing bilayer (BL) and monolayer (ML) regions (Vs = –2.6 V, It = 0.05 nA). (b) Atomically resolved STM image of bilayer graphene, with every other atom visible due to AB stacking (Vs = –0.25 V, It = 0.1 nA). (c) Atomically resolved STM image of monolayer graphene (Vs = –0.25 V, It = 0.1 nA). The dots in (b) and (c) indicate the locations of carbon atoms in the graphene lattice. (d) STM image of two zero-dimensional defects and one two-dimensional defect (Vs = 0.25 V, It = 0.02 nA). (e) STM image of two one-dimensional defects (Vs = –0.3 V, It = 0.05 nA). Adapted from Hossain et al. (a–c)52 and Wang and Hersam (d–e).53Vs, sample bias; It, tunneling current.

Figure 1

Figure 2. 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) monolayer ordering on epitaxial graphene. (a) Molecular structure of PTCDA (C: grey, O: red, H: white). (b) Large-area scanning tunneling microscopy (STM) image of the PTCDA monolayer on epitaxial graphene. The same PTCDA domain covers several underlying substrate terraces. (c) Molecularly resolved STM image of the PTCDA monolayer, which continuously follows the graphene sheet over the SiC step edge. One unit cell is indicated by the white outline; a and b are unit vectors. (d) Schematic model of the PTCDA herringbone monolayer unit cell, indicated by the black outline and unit vectors a and b. (e–g) STM images of PTCDA interacting with different types of surface defects: step edge where the graphene is not continuous (e), one-dimensional defect (f), and zero-dimensional point defect (g). For all STM images, Vs = –2.0 V; It = 0.05 nA. Adapted from Wang and Hersam.53Vs, sample bias; It, tunneling current.

Figure 2

Figure 3. Scanning tunneling spectroscopy of noncovalently functionalized epitaxial graphene. (a) Scanning tunneling microscopy image of the sample area where differential tunneling conductance (dI/dV) spectra were measured. An island of 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) is present in the lower half of the image, while the upper half of the image is pristine graphene. (b) Spatially averaged dI/dV spectrum of clean graphene measured over the upper square of (a). (c) Spatially averaged dI/dV spectrum of PTCDA measured over the lower square of (a). Adapted from Wang and Hersam.53

Figure 3

Figure 4. N,N'-dioctyl-3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDI-C8) monolayer ordering on epitaxial graphene. (a) Molecular structure of N,N'-dioctyl-3,4,9,10-perylene-tetracarboxylic diimide (PTCDI-C8) (C: grey, H: white, O: red, N: blue). (b) Scanning tunneling microscopy (STM) image of PTCDI-C8 monolayer showing filled states (Vs = –1.0 V, It = 0.05 nA, scale bar = 5 nm). (c) STM image of PTCDI-C8 monolayer showing empty states (Vs = +1.0 V, It = 0.05 nA, scale bar = 5 nm). (d) Large-area STM image of PTCDI-C8 showing long-range ordering over two substrate terraces (Vs = –2.0 V, It = 0.05 nA, scale bar = 20 nm). (e) Schematic model of the PTCDI-C8 monolayer unit cell. The black outlines in (b), (c), and (e) indicate the PTCDI-C8 unit cell. Adapted from Wang and Hersam.54Vs, sample bias; It, tunneling current.

Figure 4

Figure 5. 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) and N,N'-dioctyl-3,4,9,10-perylene-tetracarboxylic diimide (PTCDI-C8) interactions. (a) Scanning tunneling microscopy (STM) image of a submonolayer island of PTCDA (right side of image) on clean graphene (left side of image). The PTCDA island boundary is disordered but distinct (Vs = –2.0 V, It = 0.05 nA, scale bar = 10 nm). (b) STM image of a submonolayer coverage of PTCDI-C8, where the PTCDI-C8 domain edge appears to fade into the graphene background, as indicated by arrows (Vs = –2.0 V, It = 0.05 nA, scale bar = 10 nm). (c) Well-defined boundary between PTCDA monolayer (left side) and PTCDI-C8 monolayer (right side) on the same graphene terrace. This sample was prepared by depositing PTCDI-C8 onto a surface with a submonolayer coverage of PTCDA (Vs = –2.0 V, It = 0.05 nA, scale bar = 5 nm). (d) At the initial stages of PTCDI-C8 deposition onto graphene covered by a submonolayer coverage of PTCDA, the PTCDI-C8 molecules accumulate at edges such as PTCDA island edges and substrate step edges (solid arrows). The interaction of PTCDI-C8 with PTCDA also stabilizes the PTCDA edge and results in a series of apparent protrusions (dashed arrows) (Vs = –1.5 V, It = 0.04 nA, scale bar = 10 nm). Adapted from Wang and Hersam.54Vs, sample bias; It, tunneling current.

Figure 5

Figure 6. Aryl diazonium functionalization of epitaxial graphene. (a) Scheme illustrating the reduction of aryl diazonium salts by accepting an electron from the substrate, then releasing a nitrogen molecule and forming an aryl radical. The aryl radical can either covalently attach to the substrate surface or to an existing surface aryl to form oligomers. The “R” group in the schematic can be a variety of organic functional groups. (b) Large-area scanning tunneling microscopy (STM) image of 4-nitrophenyldiazonium (4-NPD) functionalized epitaxial graphene (Vs = +2.0 V, It = 0.05 nA). (c) High-resolution STM image of the 4-NPD functionalized surface, showing regions of unreacted graphene and inhomogeneous oligomer structures (Vs = –2.0 V, It = 0.05 nA). Adapted from Hossain et al.52Vs, sample bias; It, tunneling current.

Figure 6

Figure 7. Scanning tunneling spectroscopy of covalently functionalized epitaxial graphene. (a) Representative differential tunneling conductance (dI/dV) spectra of (1) 4-nitrophenyldiazonium (4-NPD) functionalized epitaxial graphene and (2) unfunctionalized epitaxial graphene, offset –250 pA/V from (1) for clarity. Inset: Band structure of pristine graphene showing the Fermi energy (EF) and Dirac point (ED). (b) Example of an infrequently observed dI/dV spectrum showing the opening of a bandgap on 4-NPD modified graphene. For all spectra, the feedback set point was 0.3 V sample bias and 0.1 nA tunneling current. Adapted from Hossain et al.52

Figure 7

Figure 8. Nanopatterning of noncovalently functionalized graphene. (a–b) Nanolithography by patterning horizontal lines without a secondary feedback loop. (a) Initial scanning tunneling microscopy (STM) image of a clean 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) monolayer. The dashed lines (1), (2), and (3) indicate the paths that the tip took while the nanopatterning conditions were applied (i.e., increasing the sample bias and tunneling current). (b) STM image of the resulting surface after nanolithography was performed along the paths indicated in (a). After performing the nanolithography (–3.6 V sample bias, 0.5 nA tunneling current, 23 nm/s tip velocity), the resulting patterns possess poor consistency. (Imaging conditions for (a) and (b): Vs = –2.0 V, It = 0.04 nA, scale bars = 20 nm.) (c–e) Nanolithography by feedback-controlled lithography (FCL). (c) Initial STM image of the clean PTCDA monolayer, with the locations of four FCL dots indicated by circles. (d) The resulting FCL dots after patterning (–4.0 V sample bias, 0.3 nA tunneling current). (Imaging conditions for (c) and (d): Vs = –1.85 V, It = 0.04 nA, scale bars = 15 nm.) (e) Time traces of the tunneling current (red) and tip height (blue) during a typical FCL patterning event. A spike in the tunneling current occurs upon PTCDA desorption and causes a tip retraction, followed by the secondary feedback loop terminating the patterning conditions. Adapted from Wang and Hersam.54Vs, sample bias; It, tunneling current.

Figure 8

Figure 9. Heteromolecular nanopatterns on graphene. (a) Schematic illustrating the process of forming heteromolecular nanopatterns. The clean epitaxial graphene surface (1) is noncovalently functionalized by a monolayer of 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) (2). Scanning tunneling microscopy (STM) nanopatterning is then used to create patterns in the PTCDA monolayer, revealing clean graphene (3). Finally, a second molecule, PTCDI-C8, is selectively deposited onto the patterned regions (4). (b) STM image of the starting PTCDA monolayer (corresponding to step 2). The circles indicate the locations of the feedback-controlled lithography (FCL) dots used to make the patterns. The FCL patterning conditions were –4.6 V sample bias and 0.5 nA tunneling current. (c) STM image after FCL patterning (step 3). (d) STM image following deposition of PTCDI-C8, which forms ordered monolayers inside the patterned regions (step 4). For all STM images, Vs = –1.8 V, It = 0.02 nA, and scale bars are 10 nm. Adapted from Wang and Hersam.54Vs, sample bias; It, tunneling current.

Figure 9

Figure 10. Nanopatterning of covalent functionalization. (a) Scanning tunneling microscopy (STM) image of the initial aryl-functionalized epitaxial graphene surface. (b) Three horizontal lines were patterned by STM nanolithography at applied sample voltages of –5.0 V, –6.0 V, and –7.0 V. The line at –4.0 V was below the desorption threshold and did not result in patterning. The tunneling current was 1.0 nA, and the tip velocity was 10 nm/s for all lines. (c) Three vertical lines patterned using similar nanolithography conditions. Sub-5 nm line widths are indicated. (Imaging conditions for all images: Vs = +1.85 V, It = 0.06 nA.) Adapted from Hossain et al.52Vs, sample bias; It, tunneling current.