Hostname: page-component-74656f9884-npj9w Total loading time: 0 Render date: 2026-11-07T08:04:58.237Z Has data issue: false hasContentIssue false

Plasmonic isolator for photonic integrated circuits

Published online by Cambridge University Press:  11 June 2018

Hiromasa Shimizu
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Japan; h-shmz@cc.tuat.ac.jp
Vadym Zayets
Affiliation:
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Japan; v.zayets@aist.go.jp

Abstract

This article discusses recent studies of on-chip integration of a plasmonic isolator on a Si substrate and a hybrid isolator on an InP substrate. The key characteristics of the plasmonic isolator are reviewed and future prospects are discussed. A method to enhance the magneto-optical figure of merit (FOM) and reduce the propagation loss of a surface plasmon in order to realize the proposed design of the plasmonic isolator is described. One hundred percent enhancement of the FOM and 20× reduction of propagation loss in the optimized ferromagnetic plasmonic structure are experimentally demonstrated.

Information

Type
Materials for Nonreciprocal Photonics
Copyright
Copyright © Materials Research Society 2018 
Figure 0

Figure 1. (a) Integration of a plasmonic waveguide with a Si nanowire waveguide. From input fiber (at right), light is coupled into a Si nanowire waveguide (green) and into a plasmonic waveguide. Next, light is coupled again in a Si nanowire waveguide and finally into the output fiber (at left). (b) Top view in an optical microscope of Si nanowire waveguide integrated with plasmonic waveguides. (c) Fiber-to-fiber transmission as a function of wavelength for different lengths of Co-TiO2-SiO2 plasmonic waveguides integrated with a Si nanowire waveguide. The black plot shows the case of a Si waveguide without the plasmonic section.

Figure 1

Figure 2. Plasmonic isolator of ring-resonator type. (a) Top view. The ring resonator is made of a Si nanowire waveguide. At the bottom, there is a plasmonic waveguide, which is coupled to the ring. (b) Magnified view of the plasmonic part. (c) Transmission of the ring resonator, when the gap between the ring and plasmonic waveguide is 600 nm. The negative peaks correspond to the resonant wavelengths, and the depth corresponds to the degree of resonance (cavity loss).

Figure 2

Figure 3. Plasmonic isolator based on a Mach–Zehnder interferometer. (a) Top view of the device. (b) Magnified view of the plasmonic waveguide in the lower arm. (c) Transmission of the asymmetric interferometer versus wavelength. The gap between the ring and plasmonic waveguide is 600 nm. The difference in length of the interferometer arms is 200 μm.

Figure 3

Figure 4. Excitation of a plasmon by a prism. (a) A schematic diagram of the fabricated Al2O3-SiO2-Fe structure. An SF10 (glass) prism is mounted on top of the Al2O3 substrate, and the light is coupled with an incident angle θinc. The reflectivity measured under positive and negative magnetic field (+/−M) is applied by an electromagnet. Schematic plasmonic mode profiles in the structure are shown by red (+M) and blue (−M) curves. (b) Minimum reflectivity Min(R) as a function of wavelength for opposite magnetization directions (red and blue dots). Note that the reflectivity minimum and its corresponding angle are dependent on wavelength. The calculated reflectivity spectra are shown for comparison by the solid lines. (c) Relative reflectivity change (the magneto-optical figure of merit) ΔRp/Rp under opposite magnetization directions (+M /−M) for different light incident angles. Adapted with permission from Reference 11. © 2016 American Institute of Physics.

Figure 4

Figure 5. (a) Cross-sectional scanning electron microscope (SEM) image of an InGaAsP/InP optical amplifier with Fe deposited on one side wall. The optical amplifier is composed of a multiple quantum well (MQW) active layer sandwiched with p- and n-type InP cladding layers. (b) Optical transmission of transverse electric (TE)-mode laser light (λ = 1550 nm), with a forward bias current of 100 mA injected from a Ti/Au electrode through a heavily p-type (p+) InGaAs contact layer. Red and blue plots correspond to opposite directions of light propagation. The difference is due to the magneto-optical effect in Fe. The broad background signal is from amplified spontaneous emission (ASE) from the optical amplifier. Adapted with permission from Reference 14. © 2006 IEEE and Optical Society of America.