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A 120 GHz FMCW radar frontend demonstrator based on a SiGe chipset

Published online by Cambridge University Press:  19 April 2012

Martin Jahn*
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468
Andreas Stelzer
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468
*
Corresponding author: M. Jahn Email: m.jahn@nthfs.jku.at
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Abstract

This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz, which features silicon–germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114 and 130 GHz and a corresponding dual–transceiver (TRX) chip that supports monostatic and quasi-monostatic radar configurations. The cascode amplifiers used in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar frontend with on-board differential microstrip antennas was built on an RF substrate. FMCW radar measurements with frequency chirps from 116 to 123 GHz verified the functionality of the designed radar sensor.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012
Figure 0

Fig. 1. Block diagram of the integrated dual TRX chip. It comprises two slightly different TRX cells that favor monostatic and quasi-monostatic radar configurations, respectively. The building blocks are indicated by abbreviations, where LOB, PAM, and MIX denote the LO buffer, power amplifier, and mixer, respectively.

Figure 1

Fig. 2. (a) Microphotograph of the signal-generation chip. Size: 728 × 728 µm2. (b) Microphotograph of the dual–TRX chip. The Rat-race (RR) coupler is indicated by an arrow. It surrounds the mixer and also connects the power amplifier. Size: 1028 × 1128 µm2. (c) LOB (above) and PAM test chips with auxiliary baluns for single-ended characterization.

Figure 2

Fig. 3. Measured S-parameters of (a) the LO buffer test chip and (b) the power amplifier test chip. Both results are not de-embedded from the input and output LC-baluns.

Figure 3

Fig. 4. (a) Block diagram of the radar sensor. It features an offset-loop PLL and two cascaded TRX chips. The DDS, PFD, and LF are located at the baseband board. (b) 120 GHz quasi-monostatic radar frontend with two channels perpendicularly arranged similar to a polarimetric radar. Size: 4 × 3.5 cm2. (c) Breakout of the PCB layout showing the chip arrangement with the multisection transformer bond–wire matching structures and the differential single-patch microstrip antennas.

Figure 4

Fig. 5. (a) First experimental setup with a small CC (1.9 dBsm) mounted on a linear rail. (b) Measured amplitude over target distance compared to the theoretical values according to the basic radar equation.

Figure 5

Fig. 6. (a) Second experimental setup with two static CCs. (b) Measured amplitude spectrum. FMWC parameters: fstart = 123 GHz, fstop = 116 GHz, and Tsweep = 3 ms.

Figure 6

Fig. 7. (a) 500 individual measurement results for position of CC1. (b) Histogram of the 500 individual measurements (binwidth 45 µm) and Gaussian distribution with identical mean and variance.

Figure 7

Fig. 8. (a) Comparison of the resulting measurement peaks with the simulated Von-Hann windowing function. (b) Close-up of peak CC1. Only a minor minor broadening of the main lobe can be identified.