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Crystal plasticity FEM study of nanoindentation behaviors of Cu bicrystals and Cu–Al bicrystals

Published online by Cambridge University Press:  17 August 2015

Mao Liu*
Affiliation:
School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, New South Wales 2522, Australia
Cheng Lu
Affiliation:
School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, New South Wales 2522, Australia
Kiet Anh Tieu
Affiliation:
School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, New South Wales 2522, Australia
Kun Zhou*
Affiliation:
School of Mechanical & Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore
*
a)Address all correspondence to these authors. e-mail: ml818@uowmail.edu.au

Abstract

A crystal plasticity finite element constitutive model combined with Bassani and Wu hardening law has been developed to investigate the effects of grain/phase boundary (GB/PB) on mechanical properties and microtexture evolution of Cu bicrystals and Cu–Al bicrystals during nanoindentation process. The simulated load–displacement curve for the Cu single crystal with Goss initial orientation has been analyzed and compared with the result from the experiment to validate the parameters. The numerical results indicate that the effects of GB/PB on load–displacement curves, indentation Young's moduli, Mises stresses, pile-up patterns are insignificant for Cu bicrystals while they are significant for Cu–Al bicrystals. The main reason is that PB works as a very effective barrier to resist the plastic slip propagation of the deformed material. The effects from different misorientations of GBs/PBs are insignificant for both Cu bicrystals and Cu–Al bicrystals. The effects of GB/PB on lattice rotation angles for both Cu bicrystals and Cu–Al bicrystals are significant.

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Articles
Copyright
Copyright © Materials Research Society 2015 
Figure 0

FIG. 1. 3D nanoindentation model setup: (a) the whole model; (b) the upper surface of Cu single crystal; (c) the upper surface of Cu bicrystals (or Cu–Al bicrystals) and (d) through thickness view of Cu bicrystals (or Cu–Al bicrystals).

Figure 1

TABLE I. Misorientations for Cu bicrystal and Cu–Al bicrystal between Grain 1 and Grain 2.

Figure 2

TABLE II. Parameters in the constitutive model for copper.43,44

Figure 3

TABLE III. Parameters in the constitutive model for aluminum.35,40

Figure 4

TABLE IV. Notation of the slip systems for the FCC materials considered in this study.

Figure 5

FIG. 2. Comparisons of load–displacement curves between: (a) numerical and experimental results for Cu single crystal; (b) the Cu single crystal and Cu bicrystals via simulation and (c) the Cu single crystal and Cu–Al bicrystals via simulation.

Figure 6

TABLE V. Simulated Young's modulus for Cu samples and Cu–Al bicrystals.

Figure 7

FIG. 3. The distributions of the Mises stress on the upper surfaces of Cu samples: (a) the Cu single crystal with Goss orientation; (b) the Cu bicrystal with Goss-Cube GB; (c) the Cu bicrystal with Goss-Brass GB and (d) the Cu bicrystal with Goss-R GB.

Figure 8

FIG. 4. The distributions of the Mises stress on the upper surfaces of Cu and Cu–Al bicrystals: (a) the Cu single crystal with Goss orientation; (b) the Cu–Al bicrystal with Goss-Cube PB; (c) the Cu–Al bicrystal with Goss-Brass PB and (d) the Cu–Al bicrystal with Goss-R PB.

Figure 9

FIG. 5. The distributions of the Mises stress on the through thickness cross section of Cu samples and Cu–Al bicrystals: (a) the Cu single crystal with Goss orientation; (b) the Cu bicrystal with Goss-R PB and (c) the Cu–Al bicrystal with Goss-R PB.

Figure 10

FIG. 6. The pile-up patterns made on the upper surfaces of Cu samples: (a) the Cu single crystal with Goss orientation; (b) the Cu bicrystal with Goss-Cube GB; (c) the Cu bicrystal with Goss-Brass GB and (d) the Cu bicrystal with Goss-R GB.

Figure 11

FIG. 7. The pile-up patterns made on the through thickness cross section of Cu samples: (a) the Cu single crystal with Goss orientation; (b) the Cu bicrystal with Goss-Cube GB; (c) the Cu bicrystal with Goss-Brass GB and (d) the Cu bicrystal with Goss-R GB.

Figure 12

FIG. 8. The pile-up patterns made on the upper surfaces of Cu single crystal and Cu–Al bicrystals: (a) the Cu single crystal with Goss orientation; (b) the Cu–Al bicrystal with Goss-Cube PB; (c) the Cu–Al bicrystal with Goss-Brass PB and (d) the Cu–Al bicrystal with Goss-R PB.

Figure 13

FIG. 9. The pile-up patterns made on the through thickness cross section of Cu single crystal and Cu–Al bicrystals: (a) the Cu single crystal with Goss orientation; (b) the Cu–Al bicrystal with Goss-Cube PB; (c) the Cu–Al bicrystal with Goss-Brass PB and (d) the Cu–Al bicrystal with Goss-R PB.

Figure 14

FIG. 10. Distribution of lattice rotation angles induced by nanoindentation for: (a) the Cu single crystal with Goss orientation; (b) the Cu bicrystal with Goss-Cube GB and (c) the Cu–Al bicrystal with Goss-Cube PB.