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“Stretching” the energy landscape of oxides—Effects on electrocatalysis and diffusion

Published online by Cambridge University Press:  12 February 2014

Bilge Yildiz*
Affiliation:
Nuclear Science and Engineering Department, Massachusetts Institute of Technology; email byildiz@mit.edu

Abstract

Elastic strain engineering offers a new route to enable high-performance catalysts, electrochemical energy conversion devices, separation membranes and memristors. By applying mechanical stress, the inherent energy landscape of reactions involved in the material can be altered. This is the so-called mechano-chemical coupling. Here we discuss how elastic strain activates reactions on metals and oxides. We also present analogies to strained polymer reactions. A rich set of investigations have been performed on strained metal surfaces over the last 15 years, and the mechanistic reasons behind strain-induced reactivity are explained by an electronic structure model. On the other hand, the potential of strain engineering of oxides for catalytic and energy applications has been largely underexplored. In oxides, mechanical stress couples to reaction and diffusion kinetics by altering the oxygen defect formation enthalpy, migration energy barrier, adsorption energy, dissociation barrier, and charge transfer barrier. A generalization of the principles for stress activated reactions from polymers to metals to oxides is offered, and the prospect of using elastic strain to tune reaction and diffusion kinetics in functional oxides is discussed.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2014 
Figure 0

Figure 1. Schematic illustrating the effect of applied stress on altering the energy landscape of a given reaction (exemplified as molecule dissociation). Here applied stress makes the endothermic reaction, AÒB, an exothermic one, A′ÒB′, and reduces the reaction energy barrier, Ea.

Figure 1

Figure 2. (a) Scanning tunneling microscopy image (440 Å × 320 Å) of two edge dislocations on a clean Ru(0001) surface at 300 K after exposure of 0.3 L of NO (1 L = 1.33×10−6 mbar.s). The small dark dots are N atoms. Inset (70 Å × 50 Å): Edge dislocation from a different experiment, after exposure of 0.1 L of NO. At the dark, tensile stretched parts near the dislocations, concentrations of N atoms are enhanced by a factor of 7 in the main image and 18 in the inset. (b) The effect of a relative change in the lattice constant Δd/deq of a Ru(0001) surface on (top): the adsorption energy of atomic nitrogen and oxygen, (middle): the binding energy of molecular NO, and (bottom): the NO dissociation energy barrier. The adsorption energies and dissociation barriers are found by density functional theory calculations. Figures are adapted with permission from Reference 22.

Figure 2

Figure 3. (a) Fluorite crystal structure, representative of the doped ZrO2 and CeO2 systems discussed (red/large and yellow/small spheres are oxygen and cation sites, respectively), (b) perovskite crystal structure, representative of the doped LaCoO3 and LaMnO3 systems (red/small, green/large, and purple/medium spheres are oxygen, A-site cation, and B-site cation sites, respectively).

Figure 3

Table I. Summary of selected works from literature on the relative increase in conductivity reported for strained thin films and multilayers. The entries in the last three rows are from computational studies, and all others are experimental.

Figure 4

Figure 4. (a) Electronic charge density distribution on the cation-oxygen (C–O) bonding plane in YSZ as a function of planar lattice strain, ε, from 0.00 to 0.08. Weakening of the O–C bond upon elastic stretching up to ε = 0.06 decreases the migration barrier. Re-strengthening of the O–C bond upon local relaxation increases the migration barrier. Gray and red spheres represent Zr and O atoms, respectively. White dashed square is the oxygen vacancy, and O is oxygen migrating toward the vacancy. (b) Computed relative change in the oxygen diffusion coefficient in YSZ with planar tensile strain. Opening of space along the migration path and the decrease of bond (O–C) strength reduce the migration barrier and increase the oxygen diffusivity (Do/Do0) up to ε = 0.04. The relative reduction of migration barrier at ε = 0.04 is 0.4 eV compared to the unstrained state. Figures are adapted with permission from References 54 and 77.

Figure 5

Figure 5. (a) Vacancy formation energy (Evac) in the bulk and on the surface of LaCoO3, (b) in-plane stress state, and (c) spin state (in μB/Co) as a function of planar strain in LaCoO3. An increase in stress is associated with a decrease in vacancy formation enthalpies calculated by DFT. Stress relaxations due to spin state transition (at 0.03 for bulk) and due to bond breaking (at 0.1 for bulk) reverse the vacancy formation enthalpy. Figures are adapted with permission from Reference 87.

Figure 6

Figure 6. (a) Topography and crystal structure of La0.8Sr0.2CoO3 films. (b) Tunneling spectra (dI/dV) at 450°C, representing the density of states, and (c) Co 2p photoelectron spectra on the tensile La0.8Sr0.2CoO3 film on SrTiO3 (LSC/STO) and compressive La0.8Sr0.2CoO3 film on LaAlO3 (LSC/LAO), at 300°C and 450°C after 90 min of annealing. Satellite peaks (Sat.) in (c) represent the enhanced presence of Co2+ oxidation state in addition to the Co3+ state on the tensile strained LSC/STO films compared to the compressively strained LSC/LAO. Temperature dependence of (d) surface exchange coefficient, k*, and (e) diffusion coefficient, D*, for the tensile LSC/STO and compressive LSC/LAO thin films extracted from analysis of O18 depth profiles. (a), (b), and (c) are reprinted with permission from Reference 89. © 2011 American Chemical Society. (d) and (e) are reprinted with permission from Reference 91. © 2013 American Chemical Society.

Figure 7

Figure 7. (a) The low spin (LS) – intermediate spin (IS) – high spin (HS) transition model fitted to data deduced from Raman spectroscopy, including the fitted transition temperature (Δ) and r2 values, for bulk (unstrained) and the 110 nm thin film (strained) LaCoO3. (b) Fractional spin occupancies obtained from the fit (LS (dotted), IS (dashed), HS (solid); bulk (gray), thin films (red)) showing the down shift of the transition temperature in strained thin-film LaCoO3 compared to bulk. Figures are reprinted with permission from Reference 92. © 2013 American Chemical Society.

Figure 8

Figure 8. Schematic illustration for relative changes in reaction energies as a function of lattice strain, ε, in the elastic regime. The diagram qualitatively indicates the reduction of the molecule adsorption energies (Eads), oxygen vacancy formation enthalpy (Evac), molecule dissociation (Ediss), and atom migration (Emig) energy barriers with increasing tensile strain.