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A combinatorial approach for the synthesis and analysis of AlxCryMozNbTiZr high-entropy alloys: Oxidation behavior

Published online by Cambridge University Press:  26 July 2018

Owais Ahmed Waseem*
Affiliation:
Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
Ulanbek Auyeskhan*
Affiliation:
Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
Hyuck Mo Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
Ho Jin Ryu*
Affiliation:
Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
*
a)Address all correspondence to this author. e-mail: hojinryu@kaist.ac.kr

Abstract

To overcome the limited feasibility of various refractory high-entropy alloys (HEAs) due to the presence of (i) very dense elements (W and Ta), (ii) costly elements (Hf and Ta), and (iii) oxidation prone elements (V) in them, AlxCryMozNbTiZr HEAs were prepared via arc-melting. Considering the critical nature of oxidation resistance in high-temperature applications, HEAs were characterized to form a combinatorial library of microstructural and oxidation behavior. AlxCryMozNbTiZr HEAs revealed multiphase microstructures consisting of intermetallic phases along with BCC matrices. Mass loss and porous microstructures were obtained in Mo-rich HEAs after oxidation at 1000 °C for 1 h. The presence of Al enhanced the oxidation resistance and developed a protective oxide layer on the HEAs. Al30Cr10-NTZ exhibited promising potential for use in high temperature applications, as it showed an oxidation time exponent of ∼0.5 and a dense and continuous oxide layer.

Information

Type
Article
Copyright
Copyright © Materials Research Society 2018 
Figure 0

FIG. 1.A combinatorial approach to the development and analysis of the AlxCryMozNbTiZr HEA.

Figure 1

TABLE I.Detailed compositions of the HEA AlxCryMoz-NTZ.

Figure 2

FIG. 2.A combinatorial library of SEM images of the homogenized AlxCryMoz-NTZ samples.

Figure 3

FIG. 3.Microstructural analyses of (a) Cr30Mo10-NTZ and (b) Al10Cr30-NTZ by SEM, XRD, and EDS.

Figure 4

TABLE II.EDS analysis of the BCC phases in the AlxCryMoz-NTZ samples.

Figure 5

TABLE III.Atomic size mismatch (δr), Allen electronegativity difference (∆XAllen), and average values of d-orbital energy level $\overline {\left( {Md} \right)}$ calculated for AlxCryMozNbTiZr.

Figure 6

FIG. 4.(a) TGA curves and (b) total mass change/unit area after 1 h of oxidation at 1000 °C in a pseudo-ternary map of homogenized AlxCryMoz-NTZ.

Figure 7

FIG. 5.Microstructures of (a) Cr10Mo30-NTZ and (b) Al30Cr10-NTZ, and EDS analysis results of (c) Cr10Mo30-NTZ and (d) Al30Cr10-NTZ of the oxide layers of AlxCryMoz-NTZ.

Figure 8

FIG. 6.Variation in the thickness of the oxide layer of AlxCryMoz-NTZ.

Figure 9

FIG. 7.(a) TGA curves on a log–log scale and (b) time exponent [slopes of log10(∆m/area) versus log10(time) curve] during the first and last ten minutes of oxidation.

Figure 10

FIG. 8.XRD analysis results of the oxide layers on three AlxCryMoz-NTZ HEAs [(a) Al20Mo20-NTZ, (b) Cr20Mo20-NTZ, and (c) Al30Cr10-NTZ] oxidized at 1000 °C for 1 h.

Figure 11

TABLE IV.Comparison of the mass gain after prolonged oxidation of Al20Cr10Mo10-NTZ, Al30Cr10-NTZ, and Al10Cr30-NTZ with relevant HEAs and refractory alloys.