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Three-dimensional visualization of nanoscale structure and deformation

Published online by Cambridge University Press:  10 September 2013

Edward J. McCumiskey
Affiliation:
Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611
Nicholas G. Rudawski
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
W. Gregory Sawyer
Affiliation:
Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611
Curtis R. Taylor*
Affiliation:
Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611
*
a)Address all correspondence to this author. e-mail: curtis.taylor@ufl.edu

Abstract

A straightforward approach allowing three-dimensional (3D) visualization of subsurface deformation beneath nanoindents using reconstructed cross-sectional transmission electron microscopy (TEM) data is demonstrated. This approach relies on generating an array of nanoindents, extracting a thin (<200 nm) cross section using a focused ion beam (FIB) and imaging with a transmission electron microscope. By rotating the orientation of the FIB cross section with respect to the array of nanoindents at the optimal angle, it is guaranteed that a different section of each nanoindent's subsurface plastic zone is contained within the final cross section. Subsequently, TEM images corresponding to different sections are reconstructed into a 3D image of a representative nanoindentation plastic zone. This approach can be extended to any array of nominally identical features that can be patterned with regular spacing and included in a single FIB cross section. It was also found to significantly enhance the throughput of preparing routine site-specific TEM samples, even when 3D visualization is not necessary. In this article, the approach is applied to visualize the plastic zones beneath nanoindents in GaAs (001), for loads of 50–1000 µN.

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Type
Articles
Copyright
Copyright © Materials Research Society 2013 
Figure 0

FIG. 1.Schematic concept of reconstructing a nanoindent in GaAs (001) from multiple snapshots in the cross section of a rotated array: (a) model of a characteristic anisotropic dislocation network beneath an indent with dislocation rosettes extending along the <111> directions; (b) an array of nominally identical features aligned with the in-plane <110> crystallographic directions, rotated with respect to the FIB cross section; (c) front view of the entire FIB cross section; and (d) XTEM images of individual dislocation networks from a cross section rearranged and stacked to give a 3D appearance, resembling the original nanoindent.

Figure 1

FIG. 2.Procedures for in situ FIB lift-out of a rotated array of features: (a) a Pt cap is deposited over the array, parallel to the alignment markers; (b) trenches are milled on either side of the cross section to be removed; (c) the specimen is lifted out using a micromanipulator and welded to a TEM pillar using Pt [Pt needle shown in top-left of (c)]; (d) and (e) the specimen is thinned to electron transparency, ∼200 nm or less.

Figure 2

FIG. 3.Schematic of a FIB slice (cross section) through an array of m × n regularly spaced features, rotated by angle θ, in (a). Individual sections from the slice in (a) are magnified and assembled in (b). The array consists of circular features centered in rectangular “unit cells.” In this schematic, the thickness of each segment, t, is slightly less than the critical thickness that would correspond to perfect overlap of the compiled segments.

Figure 3

FIG. 4.The dimensions of a single rotated unit cell from Fig. 3, measured along the x- and y-directions. The incremental offset from one unit cell to the next, along the y-direction, a × sin(θ), is equal to the critical slice thickness corresponding to perfect overlap in the recompiled image.

Figure 4

FIG. 5.XTEM micrographs of nanoindentations in GaAs (001), at loads of (a) 250 µN and (b) 50 µN. In (c), XTEM micrographs of 50-µN nanoindents in GaAs (001) have been stitched together from two images, and a schematic diagram depicts representative slices through the nanoindent.

Figure 5

FIG. 6.3D reconstructions of a representative nanoindentation plastic zone for a 250-µN indent in GaAs (001), showing (a) an AFM image of an indent superimposed over the reconstructed plastic zone, (b) 3 (of 13) XTEM images displayed in the indent volume, and perspective images viewed in the (c) [110] and (d) $[\bar 110]$ directions.

Figure 6

FIG. 7.Characterization of nanoindents' dimensions: (a) and (d) load–displacement curves, (b) and (e) AFM topography images using a supersharp AFM probe, and (c) and (f) individual line scans corresponding to the AFM images, for 50-µN and 250-µN indents, respectively. The curves in (a) and (d) correspond to the first three indents at these loads, to demonstrate the load–depth repeatability.