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Two novel memory polynomial models for modeling of RF power amplifiers

Published online by Cambridge University Press:  02 April 2014

Per N. Landin*
Affiliation:
Department of Electronics, Mathematics and Natural Sciences, University of Gävle, Kungsbäcksvägen 47, 80176 Gävle, Sweden. Phone: +46 31 772 1885 Department of Signals and Systems, Chalmers University of Technology, Hörsalsvägen 11, 41296 Göteborg, Sweden Department for Fundamental Electricity and Instrumentation (ELEC), Vrije Universiteit Brussel, Pleinlaan 2, 1050 Elsene, Brussels, Belgium Signal Processing Laboratory, KTH Royal Institute of Technology, Osquldasväg 1, 10044 Stockholm, Sweden
Kurt Barbé
Affiliation:
Department for Fundamental Electricity and Instrumentation (ELEC), Vrije Universiteit Brussel, Pleinlaan 2, 1050 Elsene, Brussels, Belgium
Wendy Van Moer
Affiliation:
Department for Fundamental Electricity and Instrumentation (ELEC), Vrije Universiteit Brussel, Pleinlaan 2, 1050 Elsene, Brussels, Belgium
Magnus Isaksson
Affiliation:
Department of Electronics, Mathematics and Natural Sciences, University of Gävle, Kungsbäcksvägen 47, 80176 Gävle, Sweden. Phone: +46 31 772 1885
Peter Händel
Affiliation:
Signal Processing Laboratory, KTH Royal Institute of Technology, Osquldasväg 1, 10044 Stockholm, Sweden
*
Corresponding author: P.N. Landin Email: perlan@chalmers.se
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Abstract

Two novel memory polynomial models are derived based on physical knowledge of a general power amplifier (PA). The derivations are given in detail to facilitate derivations of other model structures. The model error in terms of normalized mean square error (NMSE) and adjacent channel error power ratio (ACEPR) of the novel model structures are compared to that of established models based on the number of parameters using data measured on two different amplifiers, one high-power base-station PA and one low-power general purpose amplifier. The novel models show both lower NMSE and ACEPR for any chosen number of parameters compared to the established models. The low model errors make the novel models suitable candidates for both modeling and digital predistortion.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 
Figure 0

Fig. 1. The model structure proposed in [16], which represents the band-pass behavior of a RF PA. HI(ω) and HO(ω) are linear filters representing the input and output matching networks, F(ω) is a linear filter for the feedback representing bias modulation and thermal memory effects, and K(·) is a static nonlinearity [18]. x(t) is the input voltage, and y(t) is the output voltage.

Figure 1

Fig. 2. Illustration of the filter behavior with the input and output signals from the static nonlinearity K(·). The low-pass filter F(ω) removes all signal components above a given frequency, which is here illustrated as retaining the spectral components close to DC. The filters HI(ω) and HO(ω) are band-pass filters that pass the frequency components close to the carrier.

Figure 2

Fig. 3. AM/AM and AM/PM for the tested amplifiers. The amplifiers were operated in a compression of approximately 2.5 and 1.4 dB, respectively. (a) AM/AM Ericsson PA, (b) AM/PM Ericsson PA, (c) AM/AM ZVE-8G, (d) AM/PM ZVE-8G.

Figure 3

Fig. 4. Convex hull of the NMSE and ACEPR for the different models presented earlier versus the number of parameters for the Ericsson PA. (a) NMSE Ericsson PA, (b) ACEPR Ericsson PA.

Figure 4

Fig. 5. Convex hull of the NMSE and ACEPR for the different models presented earlier versus the number of parameters for the Mini-Circuits ZVE-8 G amplifier. (a) NMSE ZVE-8G, (b) ACEPR ZVE-8G.

Figure 5

Table 1. Parameter settings for EEMP and MNOMP forming the convex hull.