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Applications of carbon nanotubes and graphene produced by chemical vapor deposition

Published online by Cambridge University Press:  10 November 2017

Peng-Xiang Hou
Affiliation:
Institute of Metal Research, Chinese Academy of Sciences, China; pxhou@imr.ac.cn
Jinhong Du
Affiliation:
Institute of Metal Research, Chinese Academy of Sciences, China; jhdu@imr.ac.cn
Chang Liu
Affiliation:
Institute of Metal Research, Chinese Academy of Sciences, China; cliu@imr.ac.cn
Wencai Ren
Affiliation:
Institute of Metal Research, Chinese Academy of Sciences, China; wcren@imr.ac.cn
Esko I. Kauppinen
Affiliation:
Department of Applied Physics, School of Science, Aalto University, Finland; esko.kauppinen@hut.fi
Hui-Ming Cheng
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences; and Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, China; cheng@imr.ac.cn and hmcheng@sz.tsinghua.edu.cn

Abstract

High-quality carbon nanotubes (CNTs) and graphene synthesized by chemical vapor deposition (CVD) have unique one- and two-dimensional structures made up of sp 2-hybridized carbon atoms and excellent physical and chemical properties. They have shown potential for use in electronics, optoelectronics, energy-storage devices, composites, and sensors. In this article, we review important milestones in these uses of CNTs and graphene produced by CVD, with special emphasis on the latest advances and remaining challenges. The key characteristics and advantages of CNTs and graphene synthesized by CVD for different applications are compared, and future trends in the use of these nanocarbons are discussed.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2017 
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Figure 1. Self-aligned chemical vapor deposition (CVD) graphene transistors and their radio-frequency performance. (a) Photo of self-aligned graphene transistors on a glass substrate. (b) Optical image of self-aligned graphene transistors on a 300-nm-thick-SiO2/Si substrate. Scale bar = 100 μm. (c) Small-signal current |h21| versus frequency (f) for a 46-nm device at room temperature. The cutoff frequency (fT) is 212 GHz at a dc (direct current) bias of 0.6 V, showing potential for the application of graphene-based devices in ultrahigh-frequency circuits. (Inset) Extraction of fT by Gummel’s method, showing extraction of cutoff frequency identical to the value obtained in the main panel for each device. Note: Vds, drain-source voltage; VTG, top-gate voltage. Reproduced with permission from Reference 5. © 2012 National Academy of Sciences.

Figure 1

Figure 2. Applications of carbon nanotubes (CNTs) in nanoelectronics. (a) (top) Schematic and (bottom) a scanning electron microscope (SEM) image of a backgated CNT transistor. (b) Source-drain current (ISD) versus gate-source voltage (VGS) curves of backgate devices with 52.4% and 97.6% semiconducting CNTs. The ON/OFF current ratio (ION/IOFF) for the transistor using 97.6% semiconducting CNTs is 42, much higher than the 2.1 for the transistor using 52.4% semiconducting CNTs. Note: W, width. Reproduced with permission from Reference 6. © 2012 American Chemical Society. (c) SEM image of a CNT radio-frequency transistor. (Inset) Magnified and colorized SEM image of the transistor channel showing three parallel CNTs (highlighted by red arrows) bridging the gated region (gray color) between source and drain electrodes (golden color). Reproduced with permission from Reference 7. © 2012 American Institute of Physics.

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Figure 3. Applications of carbon nanotubes (CNTs) and graphene in flexible thin-film devices. (a) Photo of a transparent graphene-CNT integrated-circuit array and (b) schematic of a thin-film transistor using graphene electrodes and a single-wall CNT network channel on a flexible transparent poly(ethylene terephthalate) substrate. Reproduced with permission from Reference 27. © 2011 American Chemical Society. (c) Photo of an 80 × 70 mm2 monolithic flexible organic light-emitting diode using a graphene transparent conductive electrode.29

Figure 3

Figure 4. Performance and structure of composite electrode materials for lithium-ion batteries. (a) Rate performance of a LiFePO4 (LFP)/C cathode, showing the high efficiency of LFP/carbon nanotube (CNT)/carbon black (CB) or LFP/graphene nanosheet composite cathodes. Data for graphite, CB, and acetylene black are from Reference 33; data for CNTs and CNT/CB are from Reference 34; data for graphene nanosheets is from Reference 37. Note: 1 C = 170 mA/g in References 34 and 37, and 150 mA/g in Reference 33. Reproduced with permission from Reference 33, 34, and 37. © 2006 Elsevier. © 2013 American Chemical Society, and © 2013 The Royal Society of Chemistry. (b) Schematic and (c) scanning electron microscope (SEM) image of a LFP (white particles)-confined CNT thin-film electrode, and (d) photo of the corresponding flexible battery. Reproduced with permission from Reference 43. © 2014 Royal Society of Chemistry. Note: LTO, Li4Ti5O12.

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Figure 5. Demonstration of a thin, lightweight, and flexible Li4Ti5O12 (LTO)/graphene foam (GF)//LiFePO4/GF full battery. (a) Scanning electron microscope image of flexible GF loaded with LTO. (b) Photo of the bent battery encapsulated by poly(dimethylsiloxane), showing its good flexibility. (c) The bent battery lighting a red light-emitting diode device. Reproduced with permission from Reference 45. © 2012 National Academy of Sciences.