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Lab on a beam—Big data and artificial intelligence in scanning transmission electron microscopy

Published online by Cambridge University Press:  12 July 2019

Sergei V. Kalinin
Affiliation:
The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; sergei2@ornl.gov
Andrew R. Lupini
Affiliation:
The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; arl1000@ornl.gov
Ondrej Dyck
Affiliation:
The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; dyckoe@ornl.gov
Stephen Jesse
Affiliation:
The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; sjesse@ornl.gov
Maxim Ziatdinov
Affiliation:
Computational Sciences and Engineering Division, Oak Ridge National Laboratory, USA; ziatdinovma@ornl.gov
Rama K. Vasudevan
Affiliation:
The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; vasudevanrk@ornl.gov

Abstract

Atomically resolved imaging of materials enabled by the advent of aberration-corrected scanning transmission electron microscopy (STEM) has become a mainstay of modern materials science. However, much of the wealth of quantitative information contained in the fine details of atomic structure or spectra remains largely unexplored. In this article, we discuss new opportunities enabled by physics-informed big data and machine learning technologies to extract physical information from static and dynamic STEM images, ranging from statistical thermodynamics of alloys to kinetics of solid-state reactions at a single defect level. The synergy of deep-learning image analytics and real-time feedback further allows harnessing beam-induced atomic and bond dynamics to enable direct atom-by-atom fabrication. Examples of direct atomic motion over mesoscopic distances, engineered doping at selected lattice sites, and assembly of multiatomic structures are reviewed. These advances position the scanning transmission electron microscope to transition from a mere imaging tool toward a complete nanoscale laboratory for exploring electronic, phonon, and quantum phenomena in atomically engineered structures.

Information

Type
Technical Feature
Copyright
Copyright © Materials Research Society 2019 
Figure 0

Figure 1. The four challenges for atomically resolved imaging. (a) Starting with data flow from the detector and (b) using (partial) knowledge of the imaging system and material (in this example, graphene with impurities), we aim to obtain material-specific information (e.g., type and positions of individual atoms).16 (c) From this (partial) materials-specific information, we aim to generate correlative or causative knowledge about materials behavior (e.g., defect libraries or constitutive equations describing materials behavior).16 (d) With this information in hand, we can predict materials functionalities in the broad parameter space or use it as feedback during microscope operation.17 Shown for illustrative purposes in (c) are the bipartite lattice Hamiltonian (with a†/a being creation/annihilation operators of spin σ (σ = ↑↓) at site i of the sublattice A and t being the nearest neighbor hopping energy) and force field (with k being a force constant, and l and θ being bonds and angles, respectively) equations, while the exact form of modeling equations may be different for different systems and applications.

Figure 1

Figure 2. Application of deep-learning networks for feature finding and image inversion. (a) Scanning transmission electron microscope image of Si adatoms on graphene in the presence of contaminants. Scale bar = 1 nm. The data show graphene lattice (darker regions with periodic pattern), amorphous SiC regions (larger brighter regions), and point Si dopants in graphene lattice (isolated bright spots). (b) Deep-learning analytics of the image in (a). Green corresponds to Si atoms, red to carbon. The output represents the probability density that a certain pixel belongs to a particular atom type. Note the robustness of the network to noise, when the locations of carbon atoms are identified above the human eye perception. The open codes for these analyses are available on the PyCroscopy domain on GitHub.20 Data courtesy of O. Dyck.

Figure 2

Figure 3. Illustration of the potential pitfall of deep-learning analytics of experimental images. (a) The pretrained (on the standard image collection) Visual Geometry Group (VGG)-1921 deep-learning network can immediately identify the dog in the photo (Pit Bull-Shepherd-Collie mix) and even establish its breed as Staffordshire bull terrier (43%), American pit bull terrier (23%), and Basenji (11%). The neural network achieves this by learning features directly from the raw data. It first locates an object by finding its contours and then learns finer features associated in this case with the dog’s body structure and the shape of its ears, nose, etc., which allows a network to identify the dog’s breed. (b) Some of the feature maps learned by the inner layers of VGG neural network. These feature maps can provide some insight into how a network learns that there is a dog in the image. However, the use of this network for the atomically resolved images such as (c) a scanning transmission electron microscope experiment on WS2 yielded spurious identification as (d) wool (6.3%), chain mail, or velvet , simply because the network was not trained on such images. It also becomes quite obvious that a network trained on a standard set of images deals with experimental noise poorly (despite being a powerful feature extractor, it cannot extract meaningful features of an atomic lattice as can be seen from (d). Correspondingly, choice of the proper training set representing possible materials microstructures and microscope parameter uncertainties become the primary issue in successful applications of deep learning in image analytics. The feature maps in (b) and (d) are obtained from the eighth layer of the VGG-19 network (the total number of feature maps in this layer is 256, and then it becomes 512 in the next one). Notice that because the image size is reduced by a factor of 2 multiple times as it moves through a network, the feature maps in the next layers become too small for meaningful (to humans) visualization. (c) Scale bar = 1 nm. Image of dog Duffy is courtesy of M. Ziatdinov. Readers can perform this analysis themselves (with their own images and their own experimental data) using our notebook (see Reference 22).

Figure 3

Figure 4. Physics of ferroelectric materials is often illustrated via the concept of double well potential, with potential energy minima corresponding to antiparallel polarization orientations. This picture naturally presents the switching process via the addition of an extra PE term (P is polarization and E is electric field) representing the coupling with the external field. However, while the vertical axis has a straightforward meaning, the horizontal axis is a collective variable representing collective dynamics of all unit cells within the material. Inset shows (left) a high symmetry unpolled state and (right) lower symmetry poled state of a BiTeO3 ferroelectric material.

Figure 4

Figure 5. (a) Traditionally, microscopic lattice and off-lattice models are used to (b) derive macroscopic properties and structures, (c) which can be further compared with experimental observations (d). We pose that the microscopic degrees of freedom from the scanning transmission electron microscope or scanning tunneling microscope experiment can be directly matched to the microscopic lattice- and off-lattice models, yielding the information on local interactions. In (a), j, i, and k are the “spin” lattice sites, jij denotes “spin–spin” (exchange) interaction, and hi denotes “spin” interaction with external field H. The inset in (a) shows a snapshot of classical 2D Ising lattice at finite temperature. Photos of (left) CuSO4 and (right) K3[Fe(CN)6] crystals are courtesy of A.S. Kalinin and D.S. Kalinin.

Figure 5

Figure 6. (a, upper) Scanning tunneling microscope image of an FeSe0.45Te0.55 surface with bright and dark atoms representing Se and Te, respectively. Scale bar = 3 nm. (Lower) A schematic of the layered FeSe lattice structure. (b) A lattice model is initialized with effective interactions between the different atomic species present. $w_x^p$ are the interaction parameters in system p, and quantity ${{\rm{\delta }}^x}$ is equal either to one of the interactions between particles defined by ${w_x}$ or zero. (c) Statistics of atomic configurations are computed from the experimental images (blue vertical bars in histogram; the configurations themselves are shown in the top panel, where Se and Te atoms are blue and red, respectively) and from the model (red vertical bars in histogram) and compared. The statistical distance metric between the two histograms in (c) (one from experiment, one from the model) is minimized by tuning the interaction parameters of the statistical model. Once the model is optimized in this manner, it can be used for predictions at unseen thermodynamic conditions as illustrated in (d) for reduced temperatures of ${T^*} = 0.75$ and ${T^*} = 1$ (consistent with experimental data) at Se concentration of 0.45. Note: hanion, anion height (distance between the Fe layer and anion); σA, unit cell area; Pi, probability of finding outcome i in the measurement of the system p; NN, nearest neighbors; ui, energy of configuration i.37

Figure 6

Figure 7. (a) Experimental scanning transmission electron microscope movie of degradation of WS2 under electron-beam irradiation. The left and right frames were obtained on the same area at ∼90 s and ∼200 s, respectively, after the start of irradiation. The degradation of the material within this ∼110 s time period can be clearly seen. Scale bars = 2 nm. (b) Spatiotemporal trajectories reconstructed from the raw data using a combination of a deep-learning network (defect localization) and a Gaussian mixture model (defect classification). Here, Class 4 and Class 5 are associated with W vacancy and S/S2 vacancies, respectively, Classes 1 and 3 are associated with Mo dopants coupled to a S vacancy, and Class 2 corresponds to “contaminations” (the exact nature of which has not yet been explored in detail). One can identify multiple well-defined trajectories consisting either mostly of a single defect class or multiple defect classes. These trajectories can be isolated and used for an in-depth study of defect dynamics and transformations as illustrated in (c–g). (c, d) One-dimensional representation of trajectories (c) of defect subclasses originating from additional splitting of classes 1 and 3 in (b) and associated with (d) different types of Mo dopant coupling to S vacancy and with a single Mo dopant. The color scheme in (c) is the same as used for different defects in (d). Note: I, II, and III, different rotational states of the (MoW + VS structure). (e, f) These trajectories are used for Markov analysis. Specifically, (e) shows a schematic of Markov transition processes for a four-state system. Each state can transition either into itself or into one of the other three states. (f) Transition probabilities calculated from the trajectories in (c). Different colors are associated with calculated values of transition probabilities. (g) A calculation of diffusion coefficient D for defect class associated with S vacancies (shown in inset; “0” and “1” denote two different trajectories) within the 2D random walk approximation from the corresponding trajectories, isolated and collapsed onto a 2D plane. Overall, this figure shows how point-defect dynamics and solid-state transformations in the material under electron-beam irradiation (or other stimuli) can be accessed on the atomic level and corresponding reaction constants can be determined for just one point defect. Note: r, 1D representation of coordinates ($\sqrt {{X^2} + {Y^2}}$); MoW, Mo on W site; VS, sulfur vacancy.24

Figure 7

Figure 8. Schematics of learning structural descriptors from scanning transmission electron microscope (STEM) data. (a) Experimental STEM image of graphene with Si impurities. Darker areas are graphene lattice, larger brighter areas are Si-C amorphous regions, and smaller bright clusters and individual bright spots are Si-C defect complexes of interest.30 (b) Categorization of different defects using graph structures. The graphs were constructed by applying hard chemical constraints to the output of a deep-learning (DL) model. The first row shows defect structures with only one Si. The second and third rows show defect structures containing two Si impurities. +V denotes that a defect occurred next to C atomic vacancy. The alternative way of constructing descriptors is applying a Gaussian mixture model (GMM) to the stack of DL network-decoded (“cleaned”) images of atomic defects. In this case, the categorization is performed on the level of the decoded image pixel features.30 (c) A simple version of GMM fitting for n × 2 data set, where n is the total number of samples and 2 is the total number of features, which in this case are just x and y coordinates. The Gaussian distributed clusters/sources (denoted by red, blue, and green contour plots) are shown at different iterations (left to right: 1, 10, and 50) of GMM fitting. For imaging data, the features are associated with image pixels and the dimensionality of the data set is n× (width*height*channels), where w and h are the image width and height, respectively, defined in pixels, and c is number of channels/classes obtained from the pixel-wise classification of raw image with a DL model. Notice that overlap in the tails of Gaussian distributions means that some classes may get misidentified. (d) The classes extracted via GMM are images corresponding to different atomic structures (here red and green are pixels assigned to C and Si atomic species, respectively, by a DL network). Since the GMM analysis does not account for rotational invariance, the GMM-produced results can be further refined by taking into account a discrete symmetry of the lattice (not shown here).

Figure 8

Figure 9. (a) Left: Scanning transmission electron microscope image showing text that Oak Ridge National Laboratory sculptured via electron-beam-induced crystallization of SrTiO3. Scale bar = 5 nm. Right: Zoomed in area from the red square. Scale bar = 2 nm.17 (b–d) Beam-induced crystallization and dopant front motion in Si, illustrating the potential for atomic-scale material and dopant engineering in commercial semiconductors. (b) Inducing crystal growth and dopant motion in [111], the result of which is shown in (c). (d) Pushing dopants deeper into the crystal. The thick red arrows show the direction of the beam slow advance. The thick red base lines illustrate the scan width.42 (e–n) Direct electron-beam (e-beam) atom-by-atom assembly of Si clusters in graphene. Shown are sequential segments of assembly of the four-atom “fidget spinner” cluster. The arrows in (f) are pointing out the rotation of the two carbon atoms. Notice that in (h) the Si dimer obtains an additional Si atom from a Si “reservoir” outside the scan frame. The third Si atom is then knocked away by the e-beam before reattaching in a more stable configuration by substituting the two C atoms that rotated in (e–g). The insets in (e–n) show the proposed atomic structure for each observed experimental image. Scale bar = 0.5 nm.12