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Grain growth resistant nanocrystalline zirconia by targeting zero grain boundary energies

Published online by Cambridge University Press:  16 September 2015

Sanchita Dey
Affiliation:
Department of Chemical Engineering and Materials Science & NEAT ORU, University of California - Davis, Davis, California 95616, USA
Chi-Hsiu Chang
Affiliation:
Department of Chemical Engineering and Materials Science & NEAT ORU, University of California - Davis, Davis, California 95616, USA
Mingming Gong
Affiliation:
Department of Chemical Engineering and Materials Science & NEAT ORU, University of California - Davis, Davis, California, USA; and State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, People's Republic of China
Feng Liu
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, People's Republic of China
Ricardo H.R. Castro*
Affiliation:
Department of Chemical Engineering and Materials Science & NEAT ORU, University of California - Davis, Davis, California, USA
*
a)Address all correspondence to this author. e-mail: rhrcastro@ucdavis.edu

Abstract

Nanocrystalline ceramics offer interesting and useful physical properties attributed to their inherent large volume fraction of grain boundaries. At the same time, these materials are highly unstable, being subjected to severe coarsening when exposed at moderate to high temperatures, limiting operating temperatures and disabling processing conditions. In this work, we designed highly stable nanocrystalline yttria stabilized zirconia (YSZ) by targeting a decrease of average grain boundary (GB) energy, affecting both driving force for growth and mobility of the boundaries. The design was based on fundamental equations governing thermodynamics of nanocrystals, and enabled the selection of lanthanum as an effective dopant which segregates to grain boundaries and lowers the average energy of YSZ boundaries to half. While this would be already responsible for significant coarsening reduction, we further experimentally demonstrate that the GB energy decreases continuously during grain growth caused by the enrichment of boundaries with dopant, enhancing further the stability of the boundaries. The designed composition showed impressive resistance to grain growth at 1100 °C as compared to the undoped YSZ and opens the perspective for similar design in other ceramics.

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Type
Articles
Copyright
Copyright © Materials Research Society 2015 
Figure 0

FIG. 1. DSC data: DSC results showing exothermic peak related to grain growth. Signals are normalized for GB area. Peak area represents enthalpy change during coarsening and indicates a less energetic process for 2La10YSZ as compared to 12YSZ.

Figure 1

FIG. 2. STEM images: STEM images (a and c) of 12YSZ and 2La10YSZ, respectively, and associated grain size distribution (b and d) for the SPS sintered pellets heated at 900 °C (before grain growth) and 1300 °C (after grain growth). Residual porosity is observed in figure c but do not affect the enthalpy measurements.

Figure 2

FIG. 3. EELS spectra: EELS spectra at the GB and inside the grain of 2La10YSZ heated at 1300 °C (a) and of 2La10YSZ heated at 900 °C. (b) Segregation is clearly observed for the higher temperature but difficult to detect for 900 °C, due to low signal to noise ratio.

Figure 3

FIG. 4. Grain growth data: (a) Grain growth curve showing grain sizes of 12YSZ and 2La10YSZ at different time at 1100 °C, (b) SEM image of both samples heated for 48 h and evidencing different coarsening behaviors; (c) grain size distribution for both samples annealed for 48 h.

Figure 4

TABLE I. Values of parameters used in the current model calculation.

Figure 5

FIG. 5. GB energy as a function of grain size: Evolution of GB energy with grain size for 2La10YSZ at 1100 °C showing the energy significantly decreases and reaches a zero-GB energy state. Red and blue bars indicate the average GB energy directly assessed by DSC for a 2La10YSZ sample starting with 9 nm and one starting with 38 nm, respectively.

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