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Homogenised model for the electrical current distribution within a submerged arc furnace for silicon production

Published online by Cambridge University Press:  13 August 2021

ELLEN K. LUCKINS
Affiliation:
Mathematical Institute, University of Oxford, Andrew Wiles Building, Radcliffe Observatory Quarter, Woodstock Road, Oxford OX2 6GG, UK emails: Ellen.Luckins@maths.ox.ac.uk, oliver@maths.ox.ac.uk, Colin.Please@maths.ox.ac.uk
JAMES M. OLIVER
Affiliation:
Mathematical Institute, University of Oxford, Andrew Wiles Building, Radcliffe Observatory Quarter, Woodstock Road, Oxford OX2 6GG, UK emails: Ellen.Luckins@maths.ox.ac.uk, oliver@maths.ox.ac.uk, Colin.Please@maths.ox.ac.uk
COLIN P. PLEASE
Affiliation:
Mathematical Institute, University of Oxford, Andrew Wiles Building, Radcliffe Observatory Quarter, Woodstock Road, Oxford OX2 6GG, UK emails: Ellen.Luckins@maths.ox.ac.uk, oliver@maths.ox.ac.uk, Colin.Please@maths.ox.ac.uk
BENJAMIN M. SLOMAN
Affiliation:
Elkem ASA, Technology, Fiskaaveien 100, Kristiansand 4621, Norway email: ben.sloman@elkem.no
ROBERT A. VAN GORDER
Affiliation:
Department of Mathematics and Statistics, University of Otago, P.O. Box 56, Dunedin 9054, New Zealand email: rvangorder@maths.otago.ac.nz
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Abstract

Silicon is produced in submerged arc furnaces which are heated by electric currents passing through the furnace. It is important to understand the distribution of heating within the furnace in order to accurately model the silicon production process, yet many existing studies neglect aspects of this current flow. In the present paper, we formulate a model that couples the electrical current to thermal, material flow and chemical processes in the furnace. We then exploit disparate timescales to homogenise the model over the timescale of the alternating current, deriving averaged equations for the slow evolution of the system. Our numerical simulations predict a minimum applied current that is required in order to obtain steady-state solutions of the homogenised model and show that for high enough applied currents, two spatially heterogeneous steady-state solutions exist, with distinct crater sizes. We show that the system evolves to the steady state with a larger crater radius and explain this behaviour in terms of the overall power balance typically found within a furnace. We find that the industrial practice of stoking furnaces increases the overall rate of material consumption in the furnace, thereby improving the efficiency of silicon production.

Information

Type
Papers
Copyright
© The Author(s), 2021. Published by Cambridge University Press
Figure 0

Figure 1. Left: a drawing of an industrial silicon furnace [19], showing a crater at the base of each of the electrodes, and the red square highlighting the area modelled. Right: sketch of the problem domain (top), idealised geometry consisting of nested cylinders (center), and detail illustrating the change of coordinates (2.1) and the changing volume fractions of solid and gas across the thin reacting layer of charge material (bottom).

Figure 1

Table 1. Dimensional parameter values

Figure 2

Table 2. Derived scalings using the data in Table 1

Figure 3

Table 3. Dimensionless parameters using the data in Table 1

Figure 4

Figure 2. Solutions of (3.18a) with $\sigma_a(T_a)=\exp(-2/T_a)$ (a nondimensionalisation of (2.2)), $\hat{I}=2$ in (a)–(d) and $\chi=0.07$ throughout.

Figure 5

Figure 3. Lissajous plots (arc voltage against arc current) in the SAF literature. Left: an example arc signature computed from measurements of an operational silicon furnace [24]. Right: an illustration of the expected shape of the arc signature, reproduced from [52] (Figure 3.23, p. 94).

Figure 6

Figure 4. Numerical solutions of the model (3.18) using the typical parameter values in Table 3, with $C_*=0.2,$$C_s^\infty=0.75$ and $T_s^\infty=0.33$.

Figure 7

Figure 5. Behaviour of $\langle EI\rangle$, $T_s(0)$, $T_g^\infty$ with s, corresponding to the numerical solutions presented in Figure 4.

Figure 8

Figure 6. Behaviour of total reaction rate $\mathcal{Q}_T$ corresponding to the numerical solutions presented in Figure 4: variation of $\mathcal{Q}_T$ with s for various $\hat{I}$, with the dotted line showing the value of $\mathcal{Q}_T=C_s^\infty-C_*$ at the steady states $s=s_1$ and $s_2$ (left), and the maximum over s of $\mathcal{Q}_T$, as $\hat{I}$ varies (right).