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Orbital-free density functional theory for materials research

Published online by Cambridge University Press:  02 January 2018

William C. Witt
Affiliation:
Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544-5263, USA
Beatriz G. del Rio
Affiliation:
Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544-5263, USA
Johannes M. Dieterich
Affiliation:
Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544-5263, USA
Emily A. Carter*
Affiliation:
School of Engineering and Applied Science, Princeton University, Princeton, New Jersey 08544-5263, USA
*
a)Address all correspondence to this author. e-mail: eac@princeton.edu

Abstract

Orbital-free density functional theory (OFDFT) is both grounded in quantum physics and suitable for direct simulation of thousands of atoms. This article describes the application of OFDFT for materials research over roughly the past two decades, highlighting computational studies that would have been impractical (or impossible) to perform with other techniques. In particular, we review the growing body of simulations of solids and liquids that have been conducted with planewave-pseudopotential (or related) techniques. We also provide an updated account of the fundamentals of OFDFT, emphasizing aspects—such as nonlocal density functionals for computing the kinetic energy of noninteracting electrons—that enabled much of the application work. The article concludes with a discussion of the OFDFT frontier, which contains brief descriptions of other topics at the forefront of OFDFT research.

Information

Type
REVIEW
Copyright
Copyright © Materials Research Society 2017 
Figure 0

TABLE I. Summary of stability analyses performed on a variety of Mg–Al compounds. Those compounds which pass all three stability tests (described in the text) are expected to be at least meta-stable. The compounds listed in boldface type are present in the experimental phase diagram; each of these compounds passes all three stability tests.

Figure 1

FIG. 1. Variation of dislocation core energies for screw and edge dislocations in aluminum as a function of the normalized displacement x traveled by the dislocation core. The energy unit is meV/b where b is the Burgers vector. Insets show corresponding atomic configurations of the screw (upper inset) and the edge (lower inset) dislocation cores along the minimum energy path. Gray, blue, and red spheres indicate atoms locally in face-centered cubic, hexagonal close-packed, and unknown crystal structures, respectively. Reproduced figure with permission from Shin and Carter, Phys. Rev. B88, 064106 (2013). Copyright 2017 by the American Physical Society.

Figure 2

FIG. 2. Electron density for a triplet of Ga atoms at 373 K obtained with OFDFT (left) and KSDFT (right). The contour lines are plotted for values of the density equal to 0.010 electrons/a.u., which corresponds to the minimum inside the peanut-shaped line in the right part of the KSDFT data, and then for increments of 0.005 electrons/a.u. Contour lines within the core radius (≈0.75 Å) of each atom have been deleted because the pseudodensity within the core has no physical meaning. Reproduced figure with permission from González, González, and Stott, Phys. Rev. B77, 014207 (2008). Copyright 2017 by the American Physical Society.

Figure 3

FIG. 3. Total electron density, normalized to the bulk value of the slab, for liquid Ga0.935In0.065 (thick continuous line). The dashed and dash-dotted lines are the Ga and In contributions, respectively, to the total electron density. Received by private communication from the authors of Ref. 142, and used with permission.