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Scanning thermal probe calibration for accurate measurement of thermal conductivity of ultrathin films

Published online by Cambridge University Press:  22 April 2019

Adam A. Wilson*
Affiliation:
National Academy of Sciences, National Research Council, 500 E. 5th Street NW, Washington, DC 20001, USA Sensors and Electron Devices Directorate, US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA
*
Address all correspondence to Adam A. Wilson at adam.a.wilson6.ctr@mail.mil

Abstract

Scanning thermal microscopy allows thermal characterization with nanoscale resolution. However, quantitative usage has been met with skepticism, because no standard exists for calibrating probe–sample thermal exchange. In this paper, three published strategies for calibrating probe–sample thermal exchange are directly compared, then used to measure bulk and thin-film thermal conductivity. It is shown that with an appropriately calibrated probe and film-on-substrate heat conduction model, thermal conductivity values of ultrathin-film (2.9–202 nm) Al2O3 on silicon are within 20% deviation of independently measured values, while more commonly used methods yield values that may deviate by more a factor of two.

Information

Type
Research Letters
Copyright
Copyright © Materials Research Society 2019 
Figure 0

Table I. Reference samples, surface pattern, and thermal conductivity values.

Figure 1

Figure 1. Implicit method for determining measured probe signal versus thermal conductivity. Curve fits take the following form: $\lpar {V_{\rm s}-V_{\rm r}} \rpar = Ak_{\rm S}^B -C$.

Figure 2

Figure 2. Analytical model probe–sample heat transfer schematic. Reprinted from Ref. [8] with permission from the Royal Society of Chemistry, © 2015.

Figure 3

Figure 3. Calibration of thermal exchange radius, b, by the step method. (a) Schematic depicting SThM tip as it approaches and moves over the edge of the patterned feature; (b) measured z-position and (c) measured SThM probe voltage as tip moves across the edge of the patterned feature; (d) determined value of b versus Al2O3 thickness, tf, demonstrating that higher effective thermal conductivity samples show demonstrably larger thermal exchange radius by this method.

Figure 4

Figure 4. Calibration of contact thermal resistance ${\rm (}R_{\rm C}^{{\rm th}} {\rm )}$ versus thermal exchange radius, b. Intersections indicate a calibrated pair of $R_{\rm C}^{{\rm th}} $ and b.

Figure 5

Figure 5. Measured thermal conductivity by A-SThM (compared with results by TDTR) for several calibration strategies versus tf of thin-film Al2O3 on Si.

Figure 6

Table II. Look-up for calibration conditions and case number for film-on-substrate thermal conductivity determination.

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