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Modeling and predicting responses of magnetoelectric materials

Published online by Cambridge University Press:  09 November 2018

Ben Xu
Affiliation:
School of Materials Science and Engineering, Tsinghua University, China; xuben@mail.tsinghua.edu.cn
Ce-Wen Nan
Affiliation:
School of Materials Science and Engineering, Tsinghua University, China; cwnan@tsinghua.edu.cn

Abstract

Magnetoelectric (ME) materials exhibit cross-coupling effects between magnetization and polarization, by which one can manipulate the magnetization (or polarization) with an electric (or magnetic) field. To better understand the responses of ME materials and the coupling mechanisms involved, various simulation methods at different scales, ranging from electronic and atomic scale to the mesoscale, have been developed in the past decades. In this article, we summarize recent progress in modeling and predicting responses of ME materials, and present our perspectives on key issues that require further study, including multiscale simulation methods and approaches dealing with dynamic processes. The simulation methods have the potential to illuminate the dynamic processes in ME materials and device response to external fields and eventually be used for guidance for the data-driven computational design of new ME materials and devices.

Information

Type
Materials for Strain-Mediated Magnetoelectric Systems
Copyright
Copyright © Materials Research Society 2018 
Figure 0

Figure 1. To understand magnetoelectric (ME) mechanisms and predict new ME materials, features with angstrom to nanometer and micrometer sizes are investigated by methods in electronic, atomistic, and mesoscopic scales (orange). Coupling happens among these features with external stress, electric fields, or magnetic fields; the symmetries of gauge, inversion, and time are therefore destroyed and the effects of ME are induced. Note: DMFT, dynamical mean field theory; M, magnetization; E, electric field.

Figure 1

Figure 2. A 180° reversal of magnetization is observed in (a) heterostructures integrating ferroelectric and magnetic films. (b) In-plane strain, εp, induced by a voltage pulse (shown by the gray step functions) applied to the ferroelectric transfers to a magnet, and thus the magnetization direction reverses (see the direction changes shown by the arrows from up with red color to down with blue color in [b]). (c) The strain is calculated using the finite element method (FEM) and used as an input for phase-field (PF) and Landau–Lifshitz–Gilbert (LLG) calculations in the magnet. Note: M, magnetization; t, time.

Figure 2

Figure 3. Schematic of four main possible distortion modes of the oxygen octahedron in perovskite materials, ABO3 (A = divalent or monovalent metal and B = tetra- or pentavalent atom). The coupling between these distortion modes and the degrees of freedom of charge, orbital, spin, and lattice can induce comprehensive magnetoelectric effects. The distortion modes include contraction or elongation of the equatorial B–O bond lengths due to compressive or tensile strain; the rotation of BO6 perpendicular to the substrate with two BO6 octahedra rotating with same angle in the same direction (in phase) and in the opposite direction (antiphase); tilting of BO6 about an axis that is parallel to the substrate plane with four possible components labeled as 1, 2, 3, and 4; and (breathing mode) a B–O bond length disproportionation with alternating BO6 octahedra that are all equivalent.