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Interaction between semicoherent interfaces and Volterra-type dislocations in dissimilar anisotropic materials

Published online by Cambridge University Press:  07 August 2017

Aurélien Vattré*
Affiliation:
CEA, DAM, DIF, Arpajon F-91297, France
Ernian Pan
Affiliation:
Department of Civil Engineering and Department of Mathematics, University of Akron, Akron, Ohio 44325, USA
*
a) Address all correspondence to this author. e-mail: aurelien.vattre@cea.fr

Abstract

The interaction between interface dislocation networks and a single lattice Volterra-type dislocation is analyzed by superposition using anisotropic elastic theory in dissimilar materials. The general and nontrivial field solutions for the displacements and stresses are derived by applying the Stroh sextic formalism and Fourier transform in heterogeneous bimaterials. The present approach therefore enables the calculation of the elastic interaction forces for the glide and climb components with different elastic constants and unequal partitioning of elastic fields between adjacent crystals neighboring a semicoherent heterophase interface. Two-dimensional application examples to the pure misfit Au/Cu interface are evaluated, where the infinitely long straight lattice dislocation, parallel to the interface dislocations, is embedded in Au. The repulsive and attractive interaction forces between these two types of (intrinsic and extrinsic) defects are investigated and discussed, for which the results provide a novel basis for examining multiple large-scale dislocation interactions in anisotropic interface-dominated materials with accurate mechanical boundary conditions.

Information

Type
Invited Article
Copyright
Copyright © Materials Research Society 2017 
Figure 0

FIG. 1. Superposition scheme that illustrates the elastic strain interaction between a Volterra-type dislocation embedded in the anisotropic elastic material Au and the infinitely and equally spaced interface dislocations at the semicoherent heterophase Au/Cu interface.

Figure 1

TABLE I. The values of lattice parameters a of both Au and Cu crystals are those listed by Gray37 and elastic components c11, c12, and c44 by Hirth and Lothe.38

Figure 2

FIG. 2. Contour plots in GPa of stress components $\sigma _{ij}^{{\mathop{\rm int}} }\left( {{x_1},{x_2}} \right)$ and $\sigma _{ij}^{{\rm{lat}}}\left( {{x_1},{x_2}} \right)$ due to a set of intrinsic edge dislocations (solid lines) and to a single edge Volterra-type lattice dislocation (dotted lines), respectively. Both types of dislocations are located at the Au/Cu interface, i.e., x2 = 0, while the inter-dislocation spacings of the former intrinsic network are defined by (a) d = 2.25144 nm, (b) 10d, and (c) 1000d. Thick lines depict negative values (compression) while thin lines correspond to the positive values (extension). Black lines display the stress field values that are equal to zero.

Figure 3

FIG. 3. Illustration of the stress superposition in the (010) bicrystal. (a) Contour plots of exact and nonzero stress components $\sigma _{ij}^{{\mathop{\rm int}} }\left( {{x_1},{x_2}} \right)$ associated with one single set of infinitely straight, parallel, and regularly spaced misfit dislocations in Au/Cu bicrystal. The negative values (compression) are plotted by dotted lines and the positive values (extension) by solid lines. Large black lines display the stress field values that are equal to zero. (b) Stress field components induced by a single mixed dislocation embedded in Au. (c) Superposition of (a) and (b) with the stress components produced by the network of interface edge dislocations, using the same color legend for stress values.

Figure 4

FIG. 4. Elastic interaction analysis between a single mixed Volterra-type dislocation in Au and an array of interface edge dislocations. (a) Profiles of elastic interaction density ρ(x1,x2) along the dimensionless coordinates ${\delta _{{D_1}}}$ and ${\delta _{{D_2}}}$ between the lattice dislocation in Au and both interface dislocations D1 and D2, as shown by solid and dotted lines, respectively. Four locations for the lattice dislocation are considered, i.e., (1): $\left( {x_1^{{\rm{lat}}},x_2^{{\rm{lat}}} } \right) = \left( {0,1} \right)$, (2): (d/2, 1), (3): (0, 0), and (4): (d/2, 0), for which the strain energy densities are displayed on the right-hand side with the different corresponding colors. (b1) Variations of the different components of the Peach–Koehler force on the lattice dislocation in (1) for glide with the coordinate δg onto the $\left( {11\bar 1} \right)$ glide plane. (b2) Variations of the different components of the Peach–Koehler force on the lattice dislocation in (3) for climb toward both D1 and D2 with coordinates ${\delta _{{c_1}}}$ and ${\delta _{{c_2}}}$, respectively. See text for further details on the different projections.