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Mechanical annealing of Cu–Si nanowires during high-cycle fatigue

Published online by Cambridge University Press:  16 June 2014

Charlotte Ensslen
Affiliation:
Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
Oliver Kraft
Affiliation:
Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
Reiner Mönig*
Affiliation:
Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
Jin Xu
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
Guang-Ping Zhang
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
Reinhard Schneider
Affiliation:
Laboratorium für Elektronenmikroskopie, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany
*
Address all correspondence to Reiner Mönig atreiner.moenig@kit.edu

Abstract

Monotonic and cyclic tension–tension tests with an upper stress in the GPa regime have been performed on Cu–Si nanowires. The results show that the exceptional high strength of these nanomaterials is maintained or even improved upon cyclic loading. Post-mortem transmission electron microscopy gives insight in the microstructural evolution. Fatigue-induced grain growth correlates with an observed increase in compliance, the formation of dislocation networks, and an increase in tensile strength.

Information

Type
Research Letters
Copyright
Copyright © Materials Research Society 2014 
Figure 0

Figure 1. Mechanical characterization: (a) Engineering stress σ versus engineering strain ε of a Cu–Si nanowire (“specimen 3”) upon cyclic loading. The experiment is load controlled. For comparison, monotonic tensile tests of pristine Cu–Si nanowires are shown. (b) Range of the piezovoltage versus cycle number. The piezovoltage correlates with the applied strain. The increased voltage range for given load range is due to a change in modulus as given on the right axis.

Figure 1

Figure 2. Mechanical testing of a Cu–Si nanowire (“specimen 2”) in an SEM chamber: (a) nanowire which is gripped by Pt-tapes on a force sensor (upper end) and a TEM grid (lower end) before the testing and (b) after the testing. (c) Detail image of the fracture site showing that the Pt tape is still intact after failure (d). (e) Thickened regions of the nanowire which have formed upon testing.

Figure 2

Figure 3. TEM analysis of Cu–Si nanowires: (a) Bright-field and (b) dark-field image of two pristine and one mechanically fatigued nanowire (“specimen 2” after 17,493 cycles). (c) Diffraction pattern of a pristine nanowire [note that this pattern was not taken from the pristine nanowires, shown in (a) and (b), but from another pristine nanowire from the same sample]. (d) Diffraction pattern of the fatigued nanowire [taken from the bright area in (b)]. A specimen area of about 150 nm in diameter contributed to the patterns shown in (c) and (d). (e) Detail bright-field image of the pristine nanowire shown in (a) and (b). (f) Detail bright-field image of the fatigued nanowire [taken from the lighter area in (b)].

Supplementary material: File

Ensslen Supplementary Material

Table S1

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