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The size effect in the mechanical strength of semiconductors and metals: Strain relaxation by dislocation-mediated plastic deformation

Published online by Cambridge University Press:  11 August 2017

David J. Dunstan*
Affiliation:
School of Physics and Astronomy, Queen Mary University of London, London E1 4NS, U.K.
*
a) Address all correspondence to this author. e-mail: d.dunstan@qmul.ac.uk

Abstract

The Ph.D. work of Jan H. van der Merwe in 1949 established a new paradigm for the understanding of dislocation dynamics in restricted volumes. This led to a comprehensive understanding of plasticity, or strain relaxation, in the context of strained-layer semiconductor structures. However, this understanding was largely overlooked in the context of traditional metallurgy and micromechanics. We identify four reasons for this, the apparent need for an unstrained substrate in van der Merwe’s theory, the supposed inapplicability to strain gradients, the supposed inapplicability to the Hall–Petch effect (dependence of strength on the inverse square root of grain size), and an emphasis on understanding strain hardening rather than the yield point. Addressing these four points in particular, here it is shown how the insights of van der Merwe and of the earlier work by Lawrence Bragg lead to a coherent and unified view of the size-effect phenomena ranging from the Hall–Petch effect to the strain-gradient plasticity theory.

Information

Type
Invited Reviews
Copyright
Copyright © Materials Research Society 2017 
Figure 0

FIG. 1. The development of the van der Merwe and Matthews theory from the simple epitaxial layer (a) to the graded layer (b), the beam or foil in bending (c, e) and the wire in torsion (d). In (a), the growth direction z is vertical and the threading dislocation is the heavy line. At h > hc successive positions are shown as glide leaves behind the misfit dislocation (red). The graphs show the strains (x-axis), misfit strain (dashed line) and the elastic strain (solid line). The strain-thickness product (equal to b for h > hc or 5b for h > hR) is the pink shaded area. In (b) the corresponding graphs are shown for graded layer growth. In (c) a beam in bending is shown, with opposite strains above and below the neutral plane, at the critical bend radius and above. In (d) the Matthews theory is shown for a wire in torsion, with a transverse edge dislocation able to lay down an axial screw dislocation at sufficient torsional strain (reproduced from Ref. 40). The image in (e) is an end-on view of a square beam in bending in 3D DDD; the neutral plane is horizontal, halfway up the image. Dislocations are colored according to their slip systems (reproduced from Ref. 44).

Figure 1

FIG. 2. The data and fits in (a) are taken from Fig. 12 of Narutani and Takamura55 as described in the text. They show the flow stress of nickel wire at 77 K and different plastic strains from 20% (top), 15, 10, 5, 2.5, and 0.2% (bottom). The fits replicate the guides to the eye provided by the original authors and showing linearity for the lower three plastic strains and concavity for the higher three. In (b), the same data is plotted with the concave function (x = 3) fitted as a guide to the eye for all six strains. In (c), compared with the best fits with the exponent x = 1/2 (red), with x = 1 (green), and with n (equals 2x) as a free fitting parameter (black). The fitted values of x are marked. The cyan triangles show the stresses deduced from the electrical data (see text) for the 20 and 10% strain at 77 K. The dotted lines show the x = 1/2 fits to these data and the best-fit values of n are marked in cyan.

Figure 2

TABLE I. The log-likelihoods of the three models, the Hall–Petch equation with x = 1/2, the critical thickness equation with x = 1, and the Ashby equation, which takes the x = 1 values of ln L for the three higher strains and the x = 1/2, values for the three lower strains.