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Mechanical and chemical effects of solute elements on generalized stacking fault energy of Mg

Published online by Cambridge University Press:  08 October 2014

Motohiro Yuasa*
Affiliation:
Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology, Shimo-shidami, Moriyama-ku, Nagoya 463-8560, Japan
Yasumasa Chino
Affiliation:
Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology, Shimo-shidami, Moriyama-ku, Nagoya 463-8560, Japan
Mamoru Mabuchi
Affiliation:
Department of Energy Science and Technology, Graduate School of Energy Science, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto 606-8501, Japan
*
a)Address all correspondence to this author. e-mail: m-yuasa@aist.go.jp

Abstract

First-principles shear tests were performed on pure Mg, Mg–Li, Mg–Ca, Mg–Al, Mg–Sn, Mg–Ag, and Mg–Zn models to investigate the mechanical and chemical effects of the solute elements on the generalized stacking fault energy (GSFE) of Mg. The mechanical effect increased the unstable stacking fault energy (USFE), independent of the kind of solute element tested. The intensity of the mechanical effect was explained by the average distance between a solute atom and the surrounding Mg atoms, not by a difference in atomic radius between a solute atom and a Mg atom. In contrast, the chemical effect on the USFE was complicated, and the chemical effects of Ag and Zn were lower than expected from their electronegativity. Also, the chemical effect increased the USFE for the Li addition, but it decreased the USFE for the Ca addition although the electronegativity of Li is almost the same as that of Ca.

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Articles
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Copyright © Materials Research Society 2014 
Figure 0

FIG. 1. A schematic illustration of a supercell model for first-principles shear tests: (a) a front view and (b) a top view of L07 layer. The atoms marked M1–M6 are the nearest neighbor Mg atoms to a solute atom. In (a), the dashed line indicates the (0001) slip plane. The upper six layers L07–L12 are sheared according to the slip system $\left[ {10\bar 10} \right]$ (0001). In (b), the red sphere indicates a solute atom (Li, Ca, Al, Sn, Ag, or Zn), and circles and triangles indicate atoms in the L06 and L07, respectively.

Figure 1

FIG. 2. Generalized stacking fault energy (GSFE) curves for the slip system $\left[ {10\bar 10} \right]$ (0001): (a) pure Mg and Mg alloy models and (b) strained models, where x is the displacement and b is the Burgers vector (= 1/3 $\left[ {10\bar 10} \right]$) of a partial dislocation for basal slip in Mg.

Figure 2

FIG. 3. The relationship between the USFE and the cohesive energy, Ecoh.

Figure 3

FIG. 4. GSFE curves related to (a) mechanical effect, Emech, and (b) chemical effect, Echem, where x is the displacement and b is the Burgers vector (= 1/3 $\left[ {10\bar 10} \right]$) of a partial dislocation for basal slip in Mg. The GSFEs related to the mechanical effect, Emech, and the chemical effect, Echem, are given by Emech = Estrained − Epure and Echem = Ealloy − Estrained, where Epure, Ealloy, and Estrained are the GSFEs of pure Mg model, Mg alloy model, and strained model, respectively.

Figure 4

FIG. 5. The relationship between the mechanical effect on the USFE, Emech,u, and the mechanical effect on the cohesive energy, Emech,c. Emech,u is the GSFE related to the mechanical effect at the strain where the USFE was obtained, and Emech,c is the cohesive energy related to the mechanical effect.

Figure 5

TABLE I. The atomic radius and electronegativity of elements investigated in the present work.44,45

Figure 6

FIG. 6. The relationship between the mechanical effect on the USFE, Emech,u, and the average atomic distance. The average atomic distance was calculated by averaging the distances from the solute atom to the surrounding Mg atoms (M1 ∼ M6).

Figure 7

FIG. 7. LDOS of M1 Mg atom at x/b = 0 and 0.6 for the strained models: (a) Mg–Ag model and (b) Mg–Sn model, where x is the displacement and b is the Burgers vector (= 1/3 $\left[ {10\bar 10} \right]$) of a partial dislocation for basal slip in Mg. The Fermi level defines the zero energy.

Figure 8

FIG. 8. The relationship between the chemical effect on the USFE, Echem,u, and the chemical effect on the cohesive energy, Echem,c. Echem,u is the GSFE related to the chemical effect at the strain where the USFE was obtained, and Echem,u is the cohesive energy related to the chemical effect.

Figure 9

FIG. 9. LDOS of a Mg atom in the pure Mg model. The Fermi level defines the zero energy.

Figure 10

FIG. 10. LDOS in the Mg–Li model: (a) M1 Mg atom, (b) M4 Mg atom, and (c) Li atom. The M1 Mg atom is located at the upper layer on the slip plane, and the M4 Mg atom and the Li atom are located on the lower layer. The Fermi level defines the zero energy.

Figure 11

FIG. 11. LDOS in the Mg–Ca model: (a) M1 Mg atom, (b) M4 Mg atom, and (c) Ca atom. The M1 Mg atom is located at the upper layer on the slip plane, and the M4 Mg atom and the Ca atom are located on the lower layer. The Fermi level defines the zero energy.

Figure 12

FIG. 12. LDOS in the Mg–Al model: (a) M1 Mg atom, (b) M4 Mg atom, and (c) Al atom. The M1 Mg atom is located at the upper layer on the slip plane, and the M4 Mg atom and the Al atom are located on the lower layer. The Fermi level defines the zero energy.

Figure 13

FIG. 13. LDOS in the Mg–Sn model: (a) M1 Mg atom, (b) M4 Mg atom, and (c) Sn atom. The M1 Mg atom is located at the upper layer on the slip plane, and the M4 Mg atom and the Sn atom are located on the lower layer. The Fermi level defines the zero energy.

Figure 14

FIG. 14. LDOS in the Mg–Ag model: (a) M1 Mg atom, (b) M4 Mg atom, and (c) Ag atom. The M1 Mg atom is located at the upper layer on the slip plane, and the M4 Mg atom and the Ag atom are located on the lower layer. The Fermi level defines the zero energy.

Figure 15

FIG. 15. LDOS in the Mg–Zn model: (a) M1 Mg atom, (b) M4 Mg atom, and (c) Zn atom. The M1 Mg atom is located at the upper layer on the slip plane, and the M4 Mg atom and the Zn atom are located on the lower layer. The Fermi level defines the zero energy.

Figure 16

FIG. 16. LDOS of M1 Mg atom at x/b = 0 and 0.6 (0.5): (a) pure Mg model, (b) Mg–Li model, and (c) Mg–Ag model, where x is the displacement and b is the Burgers vector (= 1/3 $\left[ {10\bar 10} \right]$) of a partial dislocation for basal slip in Mg. LDOS at x/b = 0 and 0.6 are shown for the pure Mg and Mg–Ag model, and LDOS at x/b = 0 and 0.5 are shown for the Mg–Li model. The Fermi level defines the zero energy.

Figure 17

FIG. 17. Charge density difference map around a solute atom on the $\left( {1\bar 210} \right)$ plane: (a) Mg–Al model before deformation, (b) Mg–Al model at the strain where the USFE was obtained, (c) Mg–Zn model before deformation, and (d) Mg–Zn model at the strain where the USFE was obtained. The charge density difference is a difference in charge density between a Mg alloy model and a strained model. The black circle shows the BCP site.

Figure 18

FIG. 18. Charge density difference map around the M6 Mg atom on the $\left( {1\bar 210} \right)$ plane: (a) Mg–Al model before deformation, (b) Mg–Al model at the strain where the USFE was obtained, (c) Mg–Zn model before deformation, and (d) Mg–Zn model at the strain where the USFE was obtained. The charge density difference is a difference in charge density between a Mg alloy model and a strained model. The black circle shows the BCP site.

Figure 19

FIG. 19. Charge density maps on the $\left( {10\bar 10} \right)$ and the (0001) planes: (a) $\left( {10\bar 10} \right)$ in pure Mg model, (b) $\left( {10\bar 10} \right)$ in Mg–Li model, (c) $\left( {10\bar 10} \right)$ in Mg–Ca model, (d) (0001) in pure Mg model, (e) (0001) in Mg–Li model, and (f) (0001) in Mg–Ca model.