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Silicon carbide-induced piezoelectric β-phase in poly(vinylidene fluoride) and its properties

Published online by Cambridge University Press:  09 May 2012

Jay Sheth
Affiliation:
Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi-221005, India
Devendra Kumar
Affiliation:
Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi-221005, India
Vimal K. Tiwari
Affiliation:
School of Materials Science and Technology, Institute of Technology, Banaras Hindu University, Varanasi-221005, India
Pralay Maiti*
Affiliation:
School of Materials Science and Technology, Institute of Technology, Banaras Hindu University, Varanasi-221005, India
*
a)Address all correspondence to this author. e-mail: pralay_maiti@yahoo.com

Abstract

The piezoelectric β-phase of poly(vinylidene fluoride) (PVDF) has been synthesized through solution route in presence of varying percentage of silicon carbide (SiC). Various measurements were conducted to analyze the effect of SiC addition on structural, mechanical, and dielectric properties, as also the properties affecting hydrophilicity and morphology of PVDF. The x-ray diffraction, Fourier transform infrared spectroscopic and differential scanning calorimetry analyses confirm the presence of β-phase of PVDF on addition of SiC. The Young’s modulus of the composites increases as compared with pristine PVDF. The hydrophilic nature of the composites improves with increasing SiC content. Dielectric constant increases in composites, especially at lower frequency range and the relaxation pattern in the crystalline phase changes significantly causing reduction of relaxation frequency with increasing SiC concentration.

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Type
Articles
Copyright
Copyright © Materials Research Society 2012
Figure 0

FIG. 1. XRD patterns showing development of β phase in PVDF- SiC composites.

Figure 1

FIG. 2. FTIR curves showing appearance of β peak marked with (*) in PVDFC5 composite.

Figure 2

TABLE IA. The values of 2θ and respective d spacing for PVDF peaks as observed in the x-ray diffraction scans.

Figure 3

TABLE IB. The values of 2θ and respective d spacing for SiC peaks as observed in the x-ray diffraction scans.

Figure 4

FIG. 3. DSC thermograms of pure PVDF and PVDFC5: (a) melting endotherm, and (b) cooling curves at a heating/cooling rate of 10 °C/min.

Figure 5

FIG. 4. SEM images of SiC, PVDF and PVDFC5.

Figure 6

FIG. 5. Polarizing Optical images of PVDF and PVDFC5.

Figure 7

FIG. 6. Variation in contact angle with increasing SiC weight percentage.

Figure 8

FIG. 7. Stress-strain curves for pure PVDF and PVDFC5 composite.

Figure 9

FIG. 8. Effect of increasing SiC concentration on resistivity of PVDF- SiC composites.

Figure 10

FIG. 9. Dielectric real part (ε′) as a function of frequency (ω) for the prepared composite films with different SiC concentration.

Figure 11

FIG. 10. Dielectric loss as a function of frequency for the prepared composite films with different SiC concentration.

Figure 12

FIG. 11. Dielectric loss as a function of frequency for the pure PVDF and PVDFC5 at various temperatures.

Figure 13

FIG. 12. Dielectric loss in the frequency domain and spectrum was deconvoluted from H-N fits.

Figure 14

TABLE II. Fitting parameters for αc relaxation as a function of temperature obtained from H-N fits.