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Enhanced photocatalytic activity of direct Z-scheme Bi2O3/g-C3N4 composites via facile one-step fabrication

Published online by Cambridge University Press:  10 April 2018

Shuilian Liu
Affiliation:
School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha 410111, People’s Republic of China
Jianlin Chen*
Affiliation:
School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha 410111, People’s Republic of China
Difa Xu*
Affiliation:
Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha 410022, People’s Republic of China
Xiangchao Zhang
Affiliation:
Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha 410022, People’s Republic of China
Mengyao Shen
Affiliation:
Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha 410022, People’s Republic of China
*
a)Address all correspondence to these authors. e-mail: cjlinhunu@csust.edu.cn
b)e-mail: xudifa@sina.com

Abstract

Coupling oxidation type semiconductors is a feasible strategy to improve the photocatalytic activity of reduction type g-C3N4 photocatalysts. In this work, Bi2O3 was used as an oxidation type semiconductor to construct direct Z-scheme Bi2O3/g-C3N4 photocatalysts by a one-step calcination method. The obtained Bi2O3/g-C3N4 composites exhibited excellent photocatalytic activity and stability toward methylene blue degradation under visible light irradiation. The composite with 1% weight content of Bi2O3 to g-C3N4 exhibited the highest photocatalytic activity with an apparent rate constant of 0.063 min−1, which was 3.0 and 3.7 times higher than that of pure Bi2O3 and g-C3N4, respectively. The enhanced photocatalytic activity of the Bi2O3/g-C3N4 composite was mainly attributed to the improved charge separation efficiency and stronger redox ability. This work gave a new insight in developing g-C3N4-based Z-scheme heterojunction photocatalysts with enhanced photocatalytic activity.

Information

Type
Article
Copyright
Copyright © Materials Research Society 2018 
Figure 0

FIG. 1. XRD patterns of pure g-C3N4 and xBOCN (x = 0.5, 0.75, 1, 2, and 3) composites (a), and pure Bi2O3 and 2BOCN composites (b).

Figure 1

TABLE I. Physical properties of pure g-C3N4 and xBOCN (x = 0.5, 0.75, 1, 2, and 3) composites.

Figure 2

FIG. 2. SEM images of pure Bi2O3 (a), pure g-C3N4 (b), and 1BOCN composites (c), and TEM (d) and HRTEM (e) images of the 1BOCN composite.

Figure 3

FIG. 3. XPS survey spectra (a) and the corresponding high-resolution XPS spectra of C 1s (b) and N 1s (c) of g-C3N4 and 1BOCN samples, and Bi 4f (d) spectra of the 1BOCN composite.

Figure 4

FIG. 4. UV-Vis diffuse reflectance spectra of pure g-C3N4, Bi2O3 and 1BOCN composites, and the inset is the corresponding band gap calculation.

Figure 5

FIG. 5. Photocatalytic activity of the obtained samples toward MB degradation under visible light irradiation (λ > 420 nm) (a) and the apparent rate constant of the obtained samples calculated from first-order kinetics equation (b).

Figure 6

FIG. 6. PL emission of pure g-C3N4 and xBOCN (x = 0.5, 0.75, 1, 2, and 3) composites.

Figure 7

FIG. 7. Radical scavenger measurement of pure g-C3N4 (a), Bi2O3 (b), and 1BOCN composites (c), and the corresponding k value calculation (d).

Figure 8

FIG. 8. Direct Z-scheme photocatalytic mechanism of the 1BOCN composite.

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