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Magnetoelectric magnetic field sensors

Published online by Cambridge University Press:  09 November 2018

Dwight Viehland
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, USA; dviehlan@vt.edu
Manfred Wuttig
Affiliation:
University of Maryland, USA; wuttig@umd.edu
Jeffrey McCord
Affiliation:
Institute for Materials Science, Kiel University, Germany; jmc@tf.uni-kiel.de
Eckhard Quandt
Affiliation:
Kiel University, Germany; eq@tf.uni-kiel.de

Abstract

Highly sensitive magnetic field sensors using magnetoelectric (ME) bulk and thin-film composites consisting of magnetostrictive and piezoelectric phases are discussed. Examples include PZT (Pb(ZrxTi1–x)O3) fibers and AlN as the piezoelectric component and amorphous magnetostrictive material, respectively, or their multilayers. Additionally, self-organized ME composites are discussed. These ME sensors offer a passive (consuming little to no power) nature, high sensitivities, large effect enhancements at mechanical resonances, and large linear dynamic ranges. At mechanical resonance, limits of detection in the fT/Hz1/2 range can be achieved. Below the mechanical resonance frequency, the sensitivity can be enhanced through frequency conversion using alternating current magnetic or electric fields or by using magnetic field-induced changes of the elastic properties, the delta-E effect, where E represents Young’s modulus. Noise floors of about 1–100 pT/Hz1/2 at a frequency of f = 1 Hz can be obtained depending on the sensor size and the operational mode. For applications in unshielded environments, approaches to suppress acoustic and vibrational cross-sensitivities are presented.

Information

Type
Materials for Strain-Mediated Magnetoelectric Systems
Copyright
Copyright © Materials Research Society 2018 
Figure 0

Figure 1. Summary of some of the properties of magnetoelectric (ME) laminate composites and sensors. (a) ME voltage coefficient, αME, as a function of frequency between 1 and 105 Hz for Metglas/PMN-PT (red) and Metglas/PZT (black) ME laminates. These data show the resonance enhancement of αME.7 (b) Power consumption as a function of load resistance (Rload) for a Metglas/PZT ME sensor using an operational amplifier detection circuit.10 The data demonstrate a power consumption of about 10–20 mW. (c) ME voltage as a function of alternating current (AC) magnetic signal (Hac), demonstrating linearity over a wide range.12 Data are shown for various frequencies, where the equivalent voltage noise floor at 100 Hz is shown as a dashed line. (d) Noise spectral density for a Metglas/PMN-PT laminate sensor tested in a magnetically shielded chamber, including both laminate and detection circuit noise contributions. Both experimental and calculated data are shown.11 Note: PZT, Pb(ZrxTi1–x)O3; PMN-PT, Pb(Mg1/3Mb2/3)O3-xPbTiO3 (x in at.%); f, frequency; Vrms, root mean square voltage.

Figure 1

Table I. Typical piezoelectric properties of materials used in magnetoelectric composites.

Figure 2

Figure 2. (a) Magnetic force microscope image of Pb1.1[(Zr0.53Ti0.47)O3]50/[NiFe2O4]50 (PZT)(light)/(NFO)(dark) film prepared by spin-coating of a PbZrTiNiFe gel and annealing it for 12 h @ ($T_{\rm{C}}^{{\rm{NFO}}}$–100 K) in a magnetic field, Ha = 0.6 T. (b) Atomic force microscope nanodomain pattern of doped polystyrene-block-poly(ethylene oxide) (PS-b-PEO) sol-gel precursor thin film, PEO/PS = 0.35 after heating 30 min at 500°C. (c) Magnetoelectric (ME) characteristic of PZT/NFO nanocomposite film in a field of 0.6 T parallel (red) and normal (black) to the decomposition wave. The inset shows the ME coefficient as a function of the applied magnetic direct current (DC) bias field. The results demonstrate that for the inverse effect, the permeability (slope of the curves) can change by a factor of five with the application of an electrical field that even exceeds the application of a DC magnetic bias field. (d) ME characteristic of a PZT/CFO ME nanocomposite synthesized by annealing a templated PZT/CFO through doping and ordering a PS-b-PEO diblock copolymer with PEO/PS = 0.35. Note: CFO, CoFe2O4; $T_{\rm{C}}^{{\rm{NFO}}}$, Curie temperature of NFO; H1, applied magnetic field in the perpendicular direction; ${H_\parallel }$, magnetic field parallel to the longitudinal axis; P, polarization; M, magnetization; E1, applied electric field.

Figure 3

Figure 3. (a) Magnetoelectric (ME) coefficient (αME) (the insets show the values [left] outside of resonance and [right] a magnified view of the resonance), (b) limit of detection (LOD), and (c) noise voltage density, all as a function of frequency, of a cantilever-type thin-film ME sensor composed of AlN and FeCoSiB layers. The obtained frequency-dependent LOD in (b) can be derived from the ratio of the noise density level in (c) to the size of the ME effect in (a). Thus, the LOD minimum corresponds to the effect enhancement by the mechanical resonance. Note: μ0, permeability in vacuum; Hmin, minimum detectable magnetic field.37

Figure 4

Table II. Currently available magnetic field sensors with the obtained limit of detection for a 1 Hz magnetic signal.