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Stability study of thermal cycling on organic solar cells

Published online by Cambridge University Press:  18 June 2018

Harrison Ka Hin Lee
Affiliation:
SPECIFIC, College of Engineering, Bay Campus, Swansea University, Swansea, SA1 8EN, U.K.
James R. Durrant
Affiliation:
SPECIFIC, College of Engineering, Bay Campus, Swansea University, Swansea, SA1 8EN, U.K.; and Department of Chemistry, Centre for Plastic Electronics, Imperial College London, London, SW7 2AZ, U.K.
Zhe Li*
Affiliation:
SPECIFIC, College of Engineering, Bay Campus, Swansea University, Swansea, SA1 8EN, U.K.; and School of Engineering, Cardiff University, Cardiff, CF24 3AA, U.K.
Wing Chung Tsoi*
Affiliation:
SPECIFIC, College of Engineering, Bay Campus, Swansea University, Swansea, SA1 8EN, U.K.
*
a)Address all correspondence to these authors. e-mail: liz75@cardiff.ac.uk

Abstract

We present a side-by-side comparison of the stability of three different types of benchmark solution-processed organic solar cells (OSCs), subject to thermal cycling stress conditions. We study the in situ performance during 5 complete thermal cycles between −100 and 80 °C and find that all the device types investigated exhibit superior stability, albeit with a distinct temperature dependence of device efficiency. After applying a much harsher condition of 50 thermal cycles, we further affirm the robustness of the OSC against thermal cycling stress. Our results suggest that OSCs could be a promising candidate for applications with large variations and rapid change in the operating temperature such as outer space applications. Also, a substantial difference in the efficiency drops from high to low temperature for different systems is observed. It suggests that maintaining optimum performance with minimal variations with operating temperature is a key challenge to be addressed for such photovoltaic applications.

Information

Type
Invited Article
Copyright
Copyright © Materials Research Society 2018 
Figure 0

FIG. 1. (a) OSC device structure and (b) chemical structures of the active materials investigated in this study.

Figure 1

FIG. 2. Normalized device parameters: (a) JSC, (b) VOC, (c) FF, and (d) PCE of PCDTBT:PC71BM, BTR:PC71BM, and PBDB-T:ITIC as a function of time during thermal cycling between −100 and 80 °C for 5 cycles. (e) Device parameters of BTR:PC71BM devices as a function of time measured right after every 5 thermal cycles at 25 °C for 50 thermal cycles in total. The temperature changing rate for all measurements is 50 °C/min.

Figure 2

FIG. 3. J–V characteristics of (a) PCDTBT:PC71BM, (b) BTR:PC71BM, and (c) PBDB-T:ITIC at RT, −100 °C, 80 °C, and RT after 5 cycles. (d) J–V characteristics of BTR:PC71BM at RT after different numbers of thermal cycles [corresponding to Fig. 2(e)].

Figure 3

TABLE I. Summary of device parameters of PCDTBT:PC71BM, BTR:PC71BM, and PBDB-T:ITIC at RT, −100 °C, 80 °C, and RT after 5 cycles.