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Scattering of the H-polarized plane wave by finite and semi-infinite multilayer systems of infinite graphene strip gratings in the THz range

Published online by Cambridge University Press:  08 November 2019

Mstislav E. Kaliberda*
Affiliation:
V.N.Karazin Kharkiv National University, Kharkiv, Ukraine
Leonid M. Lytvynenko
Affiliation:
Institute of Radio Astronomy of the National Academy of Sciences of Ukraine, Kharkiv, Ukraine
Sergey A. Pogarsky
Affiliation:
V.N.Karazin Kharkiv National University, Kharkiv, Ukraine
*
Author for correspondence: Mstislav E. Kaliberda, E-mail: KaliberdaME@gmail.com
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Abstract

We consider the scattering and absorption of the H-polarized plane wave by finite and semi-infinite systems of layers in the THz range. Every layer consists of an infinite graphene strip grating embedded into a dielectric slab. The solution of the problem we obtain in several steps. First, with the use of the method of singular integral equations we obtain scattering matrices of a single layer. Then, we present equations for the finite and semi-infinite systems of layers relatively the Fourier amplitudes of the scattered field. The frequency dependences of the reflection, transmission, and absorption coefficients demonstrate the variety of resonances: plasmon, slab-mode, grating-mode resonances, and resonances of the multilayer structure.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2019
Figure 0

Fig. 1. The scattering geometry. (a) Finite system of layers, (b) SIS, and (c) single layer forming the multilayer structure.

Figure 1

Fig. 2. Dependences of the reflection coefficient on the frequency for M = 2, d = 10 μm, l = 70 μm, L = 35 μm, 2h = L, μc = 0.39 eV, τ = 1 ps, T = 300 K, ϕ0 = 90°. Present method (solid line) and MAR (dashed line).

Figure 2

Fig. 3. Dependences of the (a) reflection, (b) transmission, and (c) absorption coefficients on the frequency for M = 2 (dashed line), M = 10 (solid line), and SIS (dotted line), d = 10 μm, l = 70 μm, L = 50 μm, h = 17.5 μm, μc = 0.39 eV, τ = 1 ps, T = 300 K, ϕ0 = 90°.

Figure 3

Fig. 4. Dependences of the (a) reflection and (b) absorption coefficients on the frequency for SIS, μc = 0.1 eV (solid line), μc = 0.3 eV (dashed line), μc = 0.39 eV (dotted line), and μc = 0.5 eV (short-dotted line), d = 10 μm, l = 70 μm, L = 50 μm, h = 17.5 μm, τ = 1 ps, T = 300 K, ϕ0 = 90°.

Figure 4

Fig. 5. Dependences of the reflection coefficient on the period of multilayer structure L for M = 2 (short-dotted line), M = 10 (dashed line), M = 50 (solid line), and SIS (dotted line), f = 2.3875 THz, d = 10 μm, l = 70 μm, h = 17.5 μm, μc = 0.39 eV, τ = 1 ps, T = 300 K, ϕ0 = 90°.

Figure 5

Fig. 6. Dependences of ${\mathop{\rm Im}\nolimits} (\beta L)$ on the period of multilayer structure L. The parameters of the structure are the same as for Fig. 5.