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Homogenization of nanowire-based composites with anisotropic unit-cell and layered substructure

Published online by Cambridge University Press:  15 March 2016

Brian M. Wells*
Affiliation:
Department of Physics, University of Hartford, 200 Bloomfield Avenue, West Hartford, CT 06117, USA Department of Physics and Applied Physics, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
Wei Guo
Affiliation:
Department of Physics and Applied Physics, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
Viktor A. Podolskiy
Affiliation:
Department of Physics and Applied Physics, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
*
Address all correspondence to Brian M. Wells atbrwells@hartford.edu

Abstract

We analyze the optical properties of composite materials that combine nanowire and nanolayer platforms. We revisit effective-medium theory (EMT) description of wire materials with high filling fraction positioned in anisotropic unit cells and present a simple numerical technique to extend Maxwell–Garnett formalism in this limit. We also demonstrate that the resulting EMT can be combined with transfer-matrix technique to adequately describe photonic band gap behavior, previously observed in epitaxially grown semiconductor multilayer nanowires.

Information

Type
Plasmonics, Photonics, and Metamaterials Research Letters
Copyright
Copyright © Materials Research Society 2016 
Figure 0

Figure 1. (a) Schematic representation of array and unit cell of AlN/GaN nanowire Bragg mirror. The thickness of the AlN/GaN layers are 77 and 71 nm,  respectively. (b) Visualization of the homogenization procedure used to represent the heterostructures of DBR consisting of GaN/air and AlN/air composite materials for the constituent layers.

Figure 1

Figure 2. Schematic representation of rectangular unit-cell geometry for cylindrical shells used to build EMT.

Figure 2

Figure 3. EMT calculations of potential and electric fields in the unit cell where surface plots and arrows represent Re[U/|Umax|] and  Re[Ex,y] components, respectively. (a, b) p = 0.5 and εi = 50 + 0.1i in air (a) is dipole-based and (b) multipole EMTs. (c, d) p = 0.5 and εi = −5 + 0.1i in air (c) is dipole-based, and (d) multipole EMTs.

Figure 3

Figure 4. (a, b) Comparison of dipole-based (dashed lines) and multipole (solid lines) EMTs for predicting effective-medium response of nanowire arrays for varying fill fraction p and wire permittivity εi with Im(εi) = 0.1 in air for a square unit cell. The symbols corresponded to the multipole convergence M. Panel (b) illustrates the plasmonic regime.

Figure 4

Figure 5. Comparison of dipole-based (dashed lines) and multipole (solid lines) EMTs for predicting effective-medium response of plasmonic nanowire arrays (εin = −2.5, εh = 2) arranged in square (a) and rectangular (b), Lx = 1.1; Ly = 1/1.1 lattices; symbols represent the results of numerical solutions of Laplace equation, as described in Ref. 25.

Figure 5

Figure 6. Solid lines: reflectivity spectra of AlN–GaN–nanowire-based DBR structures calculated using the direct FEM numerical solution of Maxwell equations (a, c) and using EMT (b, d). In all cases, the structure contains 20 bi-layers of AlN and GaN deposited on the Si substrate; panels (a, c) represent the case when the AlN/GaN layer is deposited first; panels (b, d) correspond to GaN/AlN adjacent to the substrate. Symbols in (b, d) represent FEM solutions for the system where the unit-cell geometry was reduced by a factor of 2, moving the structure closer to validity of EMT.