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Analysis of RF power amplifiers in LINC systems

Published online by Cambridge University Press:  05 January 2012

Ronald Montesinos*
Affiliation:
LaMIPS, Laboratoire Commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France Dép. Systèmes Electroniques, ESIEE Paris, Cité Descartes, BP99, 93162 Noisy-le-Grand, France
Corinne Berland
Affiliation:
LaMIPS, Laboratoire Commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France Dép. Systèmes Electroniques, ESIEE Paris, Cité Descartes, BP99, 93162 Noisy-le-Grand, France
Mazen Abi Hussein
Affiliation:
LaMIPS, Laboratoire Commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France Dép. Systèmes Electroniques, ESIEE Paris, Cité Descartes, BP99, 93162 Noisy-le-Grand, France
Olivier Venard
Affiliation:
LaMIPS, Laboratoire Commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France Dép. Télécommunications, ESIEE Paris, Cité Descartes, BP99, 93162 Noisy-le-Grand, France
Philippe Descamps
Affiliation:
LaMIPS, Laboratoire Commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France
*
Corresponding author: R. Montesinos Email: r.montesinos@esiee.fr
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Abstract

LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are performed using a gallium-nitride high electron mobility transistor (GaN HEMT) for a power amplifier with an output power of 10 W at 900 MHz.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011
Figure 0

Fig. 1. LINC system topology.

Figure 1

Fig. 2. LINC vectorial representation.

Figure 2

Fig. 3. Wilkinson combiner.

Figure 3

Fig. 4. Chireix combiner with compensation.

Figure 4

Fig. 5. Efficiency of Wilkinson combiner and Chireix combiner (with and without compensation)

Figure 5

Fig. 6. Smith chart for different impedances with Wilkinson and Chireix combiner (with and without compensation). Z1 and Z2 represent, respectively, the impedances at the upper and lower branches (θ (0–90o)).

Figure 6

Fig. 7. Topology for class AB, B, C, and J PAs.

Figure 7

Fig. 8. Vds and Ids curves simulated for classes AB, B, C, and J PAs.

Figure 8

Fig. 9. CMCD power amplifier with parallel-resonant circuit [14].

Figure 9

Fig. 10. VMCD power amplifier with a series-resonant circuit [14].

Figure 10

Fig. 11. Vds and Ids curves simulated on both transistor for VMCD and CMCD.

Figure 11

Fig. 12. Topology for class F (with odd harmonics) and F−1 (with even harmonics) PAs.

Figure 12

Fig. 13. Drain voltage and current for classes E, F, and F−1.

Figure 13

Fig. 14. LINC architecture: Chireix combiner with compensation components and RF PAs.

Figure 14

Fig. 15. PAE in LINC transmitter for each PA class.

Figure 15

Table 1. Drain efficiency (DE) for the classes of RF PA designed.

Figure 16

Table 2. HD for the classes of RF PA designed.

Figure 17

Table 3. Maximum PAE for the different PA classes studied.

Figure 18

Fig. 16. AM/AM transfer function for all PA classes with a 16QAM modulation.

Figure 19

Fig. 17. AM/PM transfer function for all PA classes with a 16QAM modulation.

Figure 20

Fig. 18. Smith chart for classes E, F, and F−1 PAs. Z1 and Z2 represent, respectively, the impedances at the upper branch and lower branches (θ (0–90o)).

Figure 21

Fig. 19. Output spectrum of 16QAM modulation with all classes of PAs.

Figure 22

Table 4. EVM and ACLR for a 16QAM modulation.

Figure 23

Table 5. Average PAE (%) of a 16QAM modulation in LINC transmitter with all PAs.