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Applications of lead-free piezoelectric materials

Published online by Cambridge University Press:  10 August 2018

Kenji Shibata
Affiliation:
SCIOCS Co., Ltd., Japan; shibatak3@sc.sumitomo-chem.co.jp
Ruiping Wang
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan; rp-wang@aist.go.jp
Tonshaku Tou
Affiliation:
Honda Electronics Co., Ltd., Japan; ttou@honda-el.co.jp
Jurij Koruza
Affiliation:
Technische Universität Darmstadt, Germany; koruza@ceramics.tu-darmstadt.de

Abstract

The piezoelectric properties of lead-free ferroelectric materials have been dramatically improved over the past two decades. For some limited applications, their properties have reached the same levels or have even surpassed the properties of the benchmark lead-based material Pb(Zr,Ti)O3 (PZT). Initial commercial lead-free products, including powders, ceramic components, films, and devices (e.g., ultrasonic cleaner, knocking sensor), are now available on the market. Several prototype devices, such as inkjet printheads, ultrasonic motors, angular sensors, and energy harvesters, have been developed. Their overall performance is still inferior to that of PZT-based devices; however, these prototypes and products point the way for future applications. Here, we provide an overview of recent industrial developments in the field and discuss the main advantages and disadvantages of lead-free piezoceramics for individual applications.

Information

Type
Lead-free Piezoceramics
Copyright
Copyright © Materials Research Society 2018 
Figure 0

Figure 1. Shear-mode inkjet printhead. (a) Principle of the shear-mode inkjet printhead. (i) Before application of the electric field, (ii) enlargement of the pressure chamber, and (iii) shrinkage of the pressure chamber. (b) Image of the shear-mode inkjet printhead.5

Figure 1

Figure 2. A photograph of a bolt-clamped Langevin type transducer. Courtesy: Honda Electronics Co., Ltd., Japan.

Figure 2

Figure 3. Manufactured devices that use (K,Na)NbO3 (KNN) films. (a) Three-axis angular rate sensor,32 (b) energy harvester with Si mass,33 and (c) energy harvester with stainless-steel mass.34