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Magnetic properties and crystal structure of Ga2−xFexO3

Published online by Cambridge University Press:  25 May 2018

Hui Yan
Affiliation:
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Yuanqi Huang
Affiliation:
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Wei Cui
Affiliation:
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Yusong Zhi
Affiliation:
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Daoyou Guo
Affiliation:
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Zhenping Wu
Affiliation:
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Zhengwei Chen*
Affiliation:
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Weihua Tang*
Affiliation:
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
*
a)Author to whom correspondence should be addressed. Electronic mail: zhengweichen@bupt.edu.cn
b)Author to whom correspondence should be addressed. Electronic mail: whtang@bupt.edu.cn

Abstract

Ga2−xFexO3 (GFO) bulks with x from 0.7 to 1.3 have been fabricated using the classic solid-state route. The structural, optical, and magnetic properties have been investigated systematically. X-ray diffraction spectra and FULLPROF profile fitting indicate that GFO bulks belong to the orthorhombic structure with the space group Pc21n. Phase separation appears at the Fe content of x = 1.3. The optical bandgap decreases almost linearly with the increase of iron content, which means that the bandgap of GFO bulks can be controlled by adjusting the Fe content in the samples. The magnetic property measurements suggest that GFO is ferromagnetic, and the magnetic properties are enhanced compared with other reported works, exhibiting the application in ferromagnetic semiconductors devices.

Information

Type
Technical Article
Copyright
Copyright © International Centre for Diffraction Data 2018 
Figure 0

Figure 1. (Color online) Results of EDX measurement of Ga2−xFexO3 bulks. (a) EDS spectra of Ga2−xFexO3 bulks with different Fe content with x = 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3; (b) Fe content x in GFO bulks as a function of Fe content in the powders.

Figure 1

Figure 2. SEM images of the Ga2−xFexO3 bulk with x = 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3. (a) x = 0.7, (b) x = 0.8, (c) x = 0.9, (d) x = 1.0, (e) x = 1.1, (f) x = 1.2, (g) x = 1.3.

Figure 2

Figure 3. (Color online) X-ray diffraction pattern of Ga2−xFexO3 bulk with x = 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3.

Figure 3

Figure 4. (Color online) Results of profile fitting of Ga2−xFexO3 with x = 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3 using the FULLPROF program. (a) x = 0.7, (b) x = 0.8, (c) x = 0.9, (d) x = 1.0, (e) x = 1.1, (f) x = 1.2, (g) x = 1.3. The circles are the observed data (Yobs), the solid line is 95 the calculated pattern (Ycal), the bottom line is the difference between the observed and calculated patterns (Yobs−Ycal), and the vertical bars are the Bragg reflections.

Figure 4

Table I. Cell parameters (a, b, c, V) of different samples calculated from profile fitting of XRD patterns using FULLPROF program.

Figure 5

Figure 5. XPS spectra of the GaFeO3: (a) wide scan, (b) Fe 2p, (c) Ga 2p, (d) O 1s.

Figure 6

Figure 6. (Color online) (a) UV–vis absorption spectra of Ga2−xFexO3 with x = 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3; (b) the plot of (αhν)2 vs. photon energy (hν) to calculate Eg; (c) bandgap along with the Fe content.

Figure 7

Figure 7. (Color online) Results of PPMS measurement of Ga2−xFexO3 bulks with various Fe content of x = 0.8, 1.0, and 1.2. (a) Dependency of magnetization on temperature measured in the FC and ZFC conditions, (b) the Curie temperatures (TC) vs. various Fe content, (c) the magnetization vs. magnetic field (M–H) curves at 4 K, (d) the magnetic moment vs. various Fe content.

Figure 8

Table II. Different magnetic parameters and magnetic moment of Ga2−xFexO3 nanoparticles obtained from the M–H loops.

Figure 9

Figure 8. (Color online) Comparison of the MS of Ga2−xFexO3 in this work with other reported results.

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