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Automated extraction of device noise parameters based on multi-frequency, source-pull data

Published online by Cambridge University Press:  10 September 2013

Sergio Colangeli*
Affiliation:
Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico, 1, Roma, 00133, Italy
Walter Ciccognani
Affiliation:
Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico, 1, Roma, 00133, Italy
Mirko Palomba
Affiliation:
Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico, 1, Roma, 00133, Italy
Ernesto Limiti
Affiliation:
Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico, 1, Roma, 00133, Italy
*
Corresponding author: S. Colangeli Email: colangeli@ing.uniroma2.it
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Abstract

In this paper a novel approach for determining the four noise parameters of FET devices over frequency is presented. Such methodology is made of two parts: the first one allows to straightforwardly extract single-frequency noise parameters from source-pull data; the second one extends this capability to multi-frequency, source-pull data to obtain a full description of device noise behavior over frequency by means of at most 10 constant parameters (depending on the required accuracy). The whole process is automated via a software routine and does not need a previous knowledge of the FET equivalent circuit's topology, or the values of its elements. This peculiarity makes the proposed method very well suited to quick characterization campaigns of active devices, avoiding the burden of a whole set of prior, different measurements and the relevant, critical extraction procedures, which are strongly dependent on the device.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 
Figure 0

Fig. 1. Representations of a linear, noisy two-port (a) and its equivalent circuit with external noise sources (b).

Figure 1

Fig. 2. Elements of the noise correlation matrix of a GaN HEMT over frequency.

Figure 2

Fig. 3. Effect of measurement errors on noise parameter extraction for an ideal HEMT, with a 30-state pattern. Left side: example of extraction using the proposed methodologies for zero-mean measurement errors uniformly distributed in a range ΔNF [dB]. Right side: maximum percent errors versus ΔNF [dB]. − Ideal terms. ○ Single-frequency extractions. × Approach (a)'s results. ▵ Approach (b)'s results.

Figure 3

Fig. 4. Effect of measurement errors on noise parameter extraction for an ideal HEMT, with a 10-state pattern. Left side: example of extraction using the proposed methodologies for zero-mean measurement errors uniformly distributed in a range ΔNF [dB]. Right side: maximum percent errors versus ΔNF [dB]. − Ideal terms. ○ Single-frequency extractions. × Approach (a)'s results. ▵ Approach (b)'s results.

Figure 4

Fig. 5. Architecture of the Source-Pull test bench.

Figure 5

Fig. 6. Extracted noise parameters of the 4 × 30 µm HEMT. − Reference model. ○ Single-frequency extractions. × Approach (a)'s results. ▵ Approach (b)'s results.

Figure 6

Fig. 7. Extracted noise parameters of the 4 × 50 µm HEMT. − Reference model. ○ Single-frequency extractions. × Approach (a)'s results. ▵ Approach (b)'s results.