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Magnetoelectric effect in a bi-rectangular structure composed of negative/positive magnetostrictive and piezoelectric flakes

Published online by Cambridge University Press:  06 September 2011

Ke Bi
Affiliation:
College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People’s Republic of China
Yin-gang Wang*
Affiliation:
College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People’s Republic of China
De-an Pan
Affiliation:
School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Wei Wu
Affiliation:
College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: yingang.wang@nuaa.edu.cn

Abstract

Magnetoelectric (ME) effect has been studied in bi-rectangular structure made up of epoxy-bonded negative/positive magnetostrictive and piezoelectric flakes. The ME effect is affected by negative and positive magnetostrictive flakes. The ME voltage coefficient at resonance frequency shows a nearly constant plateau behavior with the bias magnetic field increased from 1 to 3.5 kOe. There is no interface between magnetostrictive and piezoelectric flakes required to achieve ME coupling, which provides a new choice to make ME devices.

Information

Type
Articles
Copyright
Copyright © Materials Research Society 2011
Figure 0

FIG. 1. Schematic illustration and photograph of a bi-rectangular magnetoelectric (ME) composite structure of negative/positive magnetostrictive and piezoelectric flakes.

Figure 1

FIG. 2. (a) The bias magnetic field (Hdc) at f =1 kHz and (b) frequency at Hdc = 200 Oe dependences of ME voltage coefficient (αE) for the bi-rectangular ME composite structure with L = 6 mm and l = 10 mm.

Figure 2

FIG. 3. (a) Three-dimensional plot of the bias magnetic field (Hdc) and frequency (f) dependences of ME voltage coefficient (αE) for the bi-rectangular ME composite structure with L = 6 mm and l = 10 mm and (b) the applied magnetic field dependence of the piezomagnetic coupling coefficient q for TbFe2 and Ni flakes. The inset shows the applied magnetic field dependence of the in-plane parallel magnetostriction λ// for TbFe2 and Ni flakes.

Figure 3

FIG. 4. (a) Frequency (f) dependence of the ME voltage coefficient (αE) with various l for the bi-rectangular ME composite structure. The inset shows the l dependence of the fr and the maximum αE. (b) f dependence of the αE with various L. The inset shows the L dependence of the fr and the maximum αE.