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Analysis of stacking faults in nacrite by low-dose atomic-resolution imaging using optimum bright-field scanning transmission electron microscopy

Published online by Cambridge University Press:  10 August 2026

Toshihiro Kogure*
Affiliation:
Deaprtment of Earth and Planetary Science, School of Science, The University of Tokyo, Tokyo, Japan
Hayato Miura
Affiliation:
Japan Electron Optics Laboratory Company Ltd, Tokyo, Japan
Taiga Okumura
Affiliation:
Faculty of Education and Integrated Arts and Sciences, Waseda University, Tokyo, Japan
Ichiro Ohnishi
Affiliation:
Japan Electron Optics Laboratory Company Ltd, Tokyo, Japan
*
Corresponding author: Toshihiro Kogure; Email: kogure@g.ecc.u-tokyo.ac.jp
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Abstract

The structure of stacking faults in nacrite, a polytype of kaolin-group minerals, was revealed by atomic-resolution imaging using aberration-corrected scanning transmission electron microscopy, particularly by optimum bright-field imaging with a segmented annular detector, which can achieve a sufficient signal-to-noise ratio even at a very low electron dose. The results unambiguously demonstrated that nacrite, which belongs to polytypic Group D of 1:1 phyllosilicates, contains the stacking sequence of Group A as a stacking fault. This result suggests that the stacking sequences of different polytypic groups can coexist in dioctahedral 1:1 phyllosilicates, as well as in trioctahedral ones. Furthermore, the atomic-resolution images of nacrite showed weak contrasts at specific oxygen columns, suggesting partial dehydroxylation in nacrite induced by electron irradiation during imaging or focused ion beam processing.

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Creative Commons
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike licence (http://creativecommons.org/licenses/by-nc-sa/4.0), which permits non-commercial re-use, distribution, and reproduction in any medium, provided the same Creative Commons licence is used to distribute the re-used or adapted article and the original article is properly cited. The written permission of Cambridge University Press or the rights holder(s) must be obtained prior to any commercial use.
Copyright
© The Author(s), 2026. Published by Cambridge University Press on behalf of The Mineralogical Society of the United Kingdom and Ireland.
Figure 0

Figure 1. (a) Low‑magnification TEM image of a FIB specimen prepared from the surface of a single nacrite crystal. (b) BF-TEM image of the FIB specimen with the incident electron beam oriented nearly parallel to [130], showing a linear contrast arising from stacking faults.

Figure 1

Figure 2. (a) Raw OBF‑STEM image of nacrite recorded along the [130] zone axis. The blue bracket on the left indicates the location of the stacking fault. (b) Image of the same area after correction for distortion caused by specimen drift during acquisition and noise reduction by filtering. (c) Enlarged view of a portion of (b) together with the corresponding structural model of nacrite.

Figure 2

Figure 3. Fourier synthesis of calculated diffraction waves with indices h = –3k and d-spacings down to the values shown below the images, together with the corresponding experimental OBF‑STEM image and structural model.Figure 3 long description.

Figure 3

Figure 4. (a) Raw OBF‑STEM image of nacrite recorded along [110]. The blue bracket on the left indicates the location of the stacking fault. (b) Image of the same area after correction for distortion caused by specimen drift during acquisition and noise reduction by filtering. (c) Enlarged view of a portion of (b) together with the corresponding structural model of nacrite viewed along [110].

Figure 4

Figure 5. (a) Processed OBF-STEM image along the [130] zone axis, including a stacking fault in the field of view, and structural models of Groups A and D corresponding to the image. The orange line in the image connects the contrast corresponding to the Si columns in the 1:1 layer between the upper and lower layers. A horizontal shift can be observed at the arrowheads – namely, at the stacking fault. (b) Processed OBF-STEM image along the [110] zone axis at the same view, containing the same stacking fault. See Figure S2 for the meanings of the triangular and rectangular symbols.

Figure 5

Figure 6. Three processed OBF-STEM images recorded along [110] of nacrite containing stacking faults that are indicated by blue brackets on the left. The triangle or rectangle on each 1:1 layer is the symbol of the layer, depending on the polytypes and six ±Xi viewing directions (see Figure S2).

Figure 6

Figure 7. (a) Processed OBF-STEM image of nacrite recorded along the [110] direction. (b) Corresponding Fourier synthetic image from the calculated diffraction waves with indices h = –k and d-spacings ≥100 pm. (c) Structural model of nacrite along [110] corresponding to (a) and (b). (d) Top view of the uppermost octahedral sheet in (c). The black arrows indicate the inner hydroxyl (Oh1) within the 1:1 layer or the corresponding contrast, and the white arrows indicate one of the outer hydroxyls (Oh2) located closest to the inner hydroxyl.Figure 7 long description.

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