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Pine-tree-like morphologies of nitrogen-doped carbon nanotubes: Electron field emission enhancement

Published online by Cambridge University Press:  30 September 2014

María Luisa García-Betancourt
Affiliation:
Advanced Materials Division, IPICYT, San Luis Potosí 78216, México; and Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
Néstor Perea-López
Affiliation:
Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
Sofía M. Vega-Díaz
Affiliation:
Research Center for Exotic Nanocarbons (JST), Shinshu University, Nagano-city 380-8553, Japan
Florentino López-Urías
Affiliation:
Advanced Materials Division, IPICYT, San Luis Potosí 78216, México
Ana Laura Elías
Affiliation:
Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
Josué Ortiz-Medina
Affiliation:
Research Center for Exotic Nanocarbons (JST), Shinshu University, Nagano-city 380-8553, Japan
Emilio Muñoz-Sandoval*
Affiliation:
Advanced Materials Division, IPICYT, San Luis Potosí 78216, México
Mauricio Terrones
Affiliation:
Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA; Research Center for Exotic Nanocarbons (JST), Shinshu University, Nagano-city 380-8553, Japan; and Department of Chemistry and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
*
a) Address all correspondence to this author. e-mail: ems@ipicyt.edu.mx

Abstract

Nitrogen-doped multiwalled carbon nanotube (CNT) bundles exhibiting pine-tree-like morphologies were synthesized on silicon–silicon oxide (Si/SiO2) substrates using a pressure-controlled chemical vapor deposition process. Electron field emission (FE) measurements showed a notable emission improvement at low turn-on voltages for the CNT pine-like morphologies (e.g., 0.59 V/µm) in comparison with standard aligned N-doped CNTs (>1.5 V/µm). We envisage that these pine-tree-like structures could be potentially useful in the fabrication of efficient FE and photonic devices.

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Articles
Copyright
Copyright © Materials Research Society 2014 
Figure 0

FIG. 1. (a–c) SEM images of pine-tree-like morphologies formed by CNxMWNTs tubes grown on the Si/SiO2 substrates. These pines were found upside down on substrate 2, named CNx-P2. The “pine tree” width average is 29.42 ± 5.86 μm and the average length is 39.47 ± 5.73 μm (the averages were obtained after measuring numerous structures from multiple SEM images). The cross-sectional cut of the sample shown in (c) reveals the tube composition inside the “pine trees,” and (d) shows a higher magnification image of the CNTs that compose a pine-tree-type bundle.

Figure 1

FIG. 2. (a) Raman spectra from different zones of a pine-tree-like morphology (inset: SEM image showing labeled locations of the cone using 1, 2, 3, 4, and 5). The D-, G-, and G′-bands appear around 1362, 1596, and 2717 cm−1, respectively; (b) Intensity ratios of ID/IG (square symbols in black color) and (c) IG′/IG (circle symbols in red color). (d) Second-order G′-band shifts for the different locations.

Figure 2

FIG. 3. SEM images of CNxMWNTs arrays: (a) Well-aligned CNxMWNTs tubes preserving the same length with a deposited layer of amorphous carbon on top (labeled CNx-P0). Inset: schematic distribution of the pine-tree zones observed below substrate 2. (b) Aligned CNxMWNTs with certain resemblance to polygon-like morphologies (labeled CNx-P1/yellow zone in the map in (a). These structures were grown preferentially near the substrate edge. (c) Nanotube bundles grown on the substrate edge interacting directly with the feedstock input (labeled CNx-P2/red zone in the inset map). (d) Pine-tree-like morphologies of nanotubes arrays [labeled CNx-P3/green zone in the map in (a)].

Figure 3

FIG. 4. (a) XPS N1s line scan obtained from the CNxMWNT samples. The signal can be attributed to two main nitrogen-bonding environments: substitutional N and pyridinic N; (b) N1s line scan obtained from the control samples of undoped MWNT samples.

Figure 4

FIG. 5. (a) Electron FE curves for four different samples labeled CNx-P0, CNx-P1, CNx-P2, and CNx-P3; (b) the turn-on field measured from the FE curves as a function of different micromorphologies. Note that the FE currents are higher and an enhancement in the turn-on field are obtained with pine-tree-like morphologies; (c) F–N plot, and (d) the β factor value plot with different micromorphologies; the pine-tree-like structures exhibit the best FE performance.

Figure 5

FIG. 6. Schematic representation of the CVD process involving ferrocene (Fe(C5H5)2) and benzylamine (C7H9N) mixtures.

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