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Neural correlates of the abolished self-referential memory effect in schizophrenia

Published online by Cambridge University Press:  31 May 2013

Y. Zhao
Affiliation:
Center for Psychiatric Research, Beijing Huilongguan Hospital, China
D. Zhang
Affiliation:
Institute of Affective and Social Neuroscience, Shenzhen University, China State Key Laboratory of Cognitive Neuroscience and Learning, Beijing Normal University, China
S. Tan*
Affiliation:
Center for Psychiatric Research, Beijing Huilongguan Hospital, China
C. Song
Affiliation:
Center for Psychiatric Research, Beijing Huilongguan Hospital, China
J. Cui
Affiliation:
Center for Psychiatric Research, Beijing Huilongguan Hospital, China
F. Fan
Affiliation:
Center for Psychiatric Research, Beijing Huilongguan Hospital, China
X. Zhu
Affiliation:
Center for Psychiatric Research, Beijing Huilongguan Hospital, China
Y. Zou
Affiliation:
Center for Psychiatric Research, Beijing Huilongguan Hospital, China
Y. Luo
Affiliation:
Institute of Affective and Social Neuroscience, Shenzhen University, China
*
* Address for correspondence: Professor S. Tan, Beijing Huilongguan Hospital, Beijing 100096China. (Email: shupingtan@126.com)
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Abstract

Background

The self-referential memory (SRM) effect refers to the phenomenon that stimuli processed with reference to the self are better remembered than those referenced to others. Studies have shown that schizophrenia patients do not have this memorial advantage for self-referenced information. The current study investigated the electrophysiological mechanism of the abolished SRM effect in schizophrenia.

Method

Twenty schizophrenia patients and 22 controls were recruited to complete an SRM task. We used a high-time resolution event-related potential (ERP) technique to analyze the electrophysiological differences between patients and controls during self- and other-reflection processing.

Results

Behavior data indicated that healthy controls had a typical SRM bias that was absent in the schizophrenia patients. ERP comparison between groups showed that the schizophrenia patients presented smaller voltages in both self- and other-reflection conditions in the 160–260 ms (P2 component) and 800–1200 ms (positive slow wave) time windows over the pre/frontal cortex. Furthermore, the N2 amplitudes (270–380 ms) differed between self- and other-reflection conditions in patients but not in normal controls. More importantly, we found that the P3 amplitudes in the parietal cortex correlated significantly with the SRM bias score in the patients (r = –0.688).

Conclusions

These results provide comprehensive and direct electrophysiological evidence for self- and other-reflective dysfunction in schizophrenia patients and contribute to our understanding of the underlying neural substrates of the abolished SRM effect in schizophrenia.

Information

Type
Original Articles
Copyright
Copyright © Cambridge University Press 2013 
Figure 0

Table 1. Demographic and clinical data for patient and control groups

Figure 1

Fig. 1. Schematic diagram of three experimental trials in the encoding phase. Each column represents a trial in one experimental block. RT, Response time. Both the cues and trait adjectives were in Chinese.

Figure 2

Fig. 2. Behavior results of the recognition phase. (a) Recognition scores of patients and controls in the self-reflection, other-reflection and font-judgment conditions. (b) The self-referential memory (SRM) bias scores of patients and controls. Error bars correspond to one standard error.

Figure 3

Fig. 3. Comparison of grand mean event-related potentials (ERPs) between patients and controls. (a) The P2 component at electrode site F5. (b) The positive slow wave at electrode site AF4.

Figure 4

Fig. 4. Comparison of grand mean event-related potentials (ERPs) between font-judgment and self/other-reflection conditions. (a) The N2 component at electrode site AF4. (b) The P3 component at electrode site Pz.